Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device

doi:10.1088/1674-1056/23/12/126101

Abstract Highly repeatable multilevel bipolar resistive switching in Ti/CeO_x/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO₂ films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (>10⁴ s) with an acceptable resistance ratio (～ 10²), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeO_x films, the possible mechanism of multilevel resistive switching in CeO_x RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.

Keywords: multilevel resistive switching Schottky emission cerium oxide oxygen vacancy

Received: 21 May 2014
Revised: 04 July 2014
Accepted manuscript online:

PACS:	61.05.cp	(X-ray diffraction)
	73.40.Rw	(Metal-insulator-metal structures)
	73.50.-h	(Electronic transport phenomena in thin films)
	77.22.Jp	(Dielectric breakdown and space-charge effects)

Corresponding Authors: M. Ismail
E-mail: ismailmalikbzu10@gmail.com

Cite this article:

M. Ismail, M. W. Abbas, A. M. Rana, I. Talib, E. Ahmed, M. Y. Nadeem, T. L. Tsai, U. Chand, N. A. Shah, M. Hussain, A. Aziz, M. T. Bhatti Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device 2014 Chin. Phys. B 23 126101


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Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device

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Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device