Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

doi:10.1088/1674-1056/22/9/097701

Abstract A composition-modulated (HfO₂)_x(Al₂O₃)_1-x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO₂)_x(Al₂O₃)_1-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.

Keywords: composition modulated films memory device charge trap atomic layer deposition

Received: 20 January 2013
Revised: 25 March 2013
Accepted manuscript online:

PACS:	77.55.df	(For silicon electronics)
	81.20.Fw	(Sol-gel processing, precipitation)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the Science and Technology Research Key Project of Education Department of Henan, China (Grant No. 13A140021), the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124), the National Basic Research Program of China (Grant No. 2010CB934201), and the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004).

Corresponding Authors: Tang Zhen-Jie
E-mail: zjtang@hotmail.com

Cite this article:

Tang Zhen-Jie (汤振杰), Li Rong (李荣), Yin Jiang (殷江) Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer 2013 Chin. Phys. B 22 097701

[1]	Burkhardt M, Jedaa A, Novak M, Ebel A, Voitchovsky K, Stellacci F and Hirsch A 2010 Adv. Mater. 22 2525
[2]	Wang L, Sun H F, Zhou H H and Zhu J 2010 Chin. Phys. B 19 108102
[3]	Choi Y O and Kim S Y 2010 Chin. Phys. Lett. 27 097701
[4]	Li W, Xu L, Zhao W M, Ding H L, Ma Z Y, Xu J and Chen K J 2010 Chin. Phys. B 19 047308
[5]	Eitan B, Pavan P, Bloom I, Aloni E, Frommer A and Finzi D 2000 IEEE Electron Device Lett. 21 543
[6]	Park G H and Cho W J 2010 Appl. Phys. Lett. 96 043503
[7]	Peng Y H, Liu X Y, Du G, Liu F, Jin R and Kang J F 2012 Chin. Phys. B 21 078501
[8]	Zheng Z W, Huo Z L, Zhu C X, Xu Z G, Liu J and Liu M 2011 Chin. Phys. B 20 108501
[9]	Tang Z J, Zhu X H, Xu H N, Xia Y D, Yin J, Liu Z G, Li A D and Yan F 2013 Materials Lett. 92 21
[10]	Jung M H, Kim K S, Park G H and Cho W J 2009 Appl. Phys. Lett. 94 053508
[11]	Tan Y N, Chim W K, Choi W K, Joo M S and Cho B J 2006 IEEE Trans. Electron Devices 53 654
[12]	Tang Z J, Xia Y D, Xu H N, Yin J, Liu Z G, Li A D, Liu X J, Yan F and Ji X L 2011 Electrochem. Solid-State Lett. 14 G13
[13]	Yu H Y, Li M F, Cho B J, Yeo C C, Joo M S, Kwong D L, Pan J S, Ang C H, Zheng J Z and Ramanathan S 2002 Appl. Phys. Lett. 81 376
[14]	Liu L, Xu J P, Ji F, Chen J X and Lai P T 2012 Appl. Phys. Lett. 101 033503
[15]	Robertson J 2006 Rep. Prog. Phys. 69 327
[16]	Liu Z H, Lai P T and Cheng Y C 1991 IEEE Trans. Electron Devices 38 344
[17]	Wang Y and White M H 2005 Solid-State Electron. 49 97
[18]	Yang Y and White M H 2000 Solid-State Electron. 44 949
[19]	Compagnoni C M, Ielmini D, Spinelli A S and Lacaita A L 2005 IEEE Trans. Electron Devices 52 569
[20]	Zhu C X, Huo Z L, Xu Z G, Zhang M H, Wang Q, Liu J, Long S B and Liu M 2010 Appl. Phys. Lett. 97 253503

[1]	High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). Chin. Phys. B, 2023, 32(1): 018503.
[2]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[3]	Designing high k dielectric films with LiPON—Al₂O₃ hybrid structure by atomic layer deposition Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Chin. Phys. B, 2022, 31(5): 057701.
[4]	Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Chin. Phys. B, 2022, 31(1): 017803.
[5]	Characterization and application in XRF of HfO₂-coated glass monocapillary based on atomic layer deposition Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Chin. Phys. B, 2021, 30(5): 050703.
[6]	Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威). Chin. Phys. B, 2020, 29(4): 047701.
[7]	Low-temperature plasma enhanced atomic layer deposition of large area HfS₂ nanocrystal thin films Ailing Chang(常爱玲), Yichen Mao(毛亦琛), Zhiwei Huang(黄志伟), Haiyang Hong(洪海洋), Jianfang Xu(徐剑芳), Wei Huang(黄巍), Songyan Chen(陈松岩), Cheng Li(李成). Chin. Phys. B, 2020, 29(3): 038102.
[8]	Surface termination effects on the electrical characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition Ji-Bin Fan(樊继斌), Shan-Ya Ling(凌山雅), Hong-Xia Liu(刘红侠), Li Duan(段理), Yan Zhang(张研), Ting-Ting Guo(郭婷婷), Xing Wei(魏星), and Qing He(何清)$. Chin. Phys. B, 2020, 29(11): 117701.
[9]	Effect of source temperature on phase and metal–insulator transition temperature of vanadium oxide films grown by atomic layer deposition Bingheng Meng(孟兵恒), Dengkui Wang(王登魁)†, Deshuang Guo(郭德双), Juncheng Liu(刘俊成), Xuan Fang(方铉), Jilong Tang(唐吉龙), Fengyuan Lin(林逢源), Xinwei Wang(王新伟), Dan Fang(房丹), and Zhipeng Wei(魏志鹏)‡. Chin. Phys. B, 2020, 29(10): 107102.
[10]	Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer Bing Bai(白冰), Hong Wang(王宏), Yan Li(李岩), Yunxia Hao(郝云霞), Bo Zhang(张博), Boping Wang(王博平), Zihang Wang(王子航), Hongqi Yang(杨红旗), Qihang Gao(高启航), Chao Lü(吕超), Qingshun Zhang(张庆顺), Xiaobing Yan(闫小兵). Chin. Phys. B, 2019, 28(10): 106802.
[11]	Investigation of flux dependent sensitivity on single event effect in memory devices Jie Luo(罗捷), Tie-shan Wang(王铁山), Dong-qing Li(李东青), Tian-qi Liu(刘天奇), Ming-dong Hou(侯明东), You-mei Sun(孙友梅), Jing-lai Duan(段敬来), Hui-jun Yao(姚会军), Kai Xi(习凯), Bing Ye(叶兵), Jie Liu(刘杰). Chin. Phys. B, 2018, 27(7): 076101.
[12]	Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide Cai-Xia Hou(侯彩霞), Xin-He Zheng(郑新和), Rui Jia(贾锐), Ke Tao(陶科), San-Jie Liu(刘三姐), Shuai Jiang(姜帅), Peng-Fei Zhang(张鹏飞), Heng-Chao Sun(孙恒超), Yong-Tao Li(李永涛). Chin. Phys. B, 2017, 26(9): 098103.
[13]	Influences of different oxidants on characteristics of La₂O₃/Al₂O₃ nanolaminates deposited by atomic layer deposition Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Li Duan(段理), Yan Zhang(张研), Xiao-Chen Yu(于晓晨). Chin. Phys. B, 2017, 26(6): 067701.
[14]	Performance and reliability improvement of La₂O₃/Al₂O₃ nanolaminates using ultraviolet ozone post treatment Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Bin Sun(孙斌), Li Duan(段理), Xiao-Chen Yu(于晓晨). Chin. Phys. B, 2017, 26(5): 057702.
[15]	Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level Zhi-Yuan Lun(伦志远), Yun Li(李云), Kai Zhao(赵凯), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦), Yi Wang(王漪). Chin. Phys. B, 2016, 25(8): 088502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

Cite this article:

Online attention