Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC

doi:10.1088/1674-1056/22/7/078102

Abstract High-temperature annealing of atomic layer deposition (ALD) of Al₂O₃ films on 4H-SiC in O₂ atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al₂O₃ films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O₂ atmosphere can improve the interface of Al₂O₃/SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.

Keywords: Al₂O₃ SiC high-temperature annealing crystallize

Received: 07 November 2012
Revised: 31 January 2013
Accepted manuscript online:

PACS:	81.40.Ef	(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61106080) and the Major Program of the National Natural Science Foundation of China (Grant No. 2013ZX02305).

Corresponding Authors: Shen Hua-Jun
E-mail: shenhuajun@ime.ac.cn

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Wang Yi-Yu (王弋宇), Shen Hua-Jun (申华军), Bai Yun (白云), Tang Yi-Dan (汤益丹), Liu Ke-An (刘可安), Li Cheng-Zhan (李诚瞻), Liu Xin-Yu (刘新宇) Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC 2013 Chin. Phys. B 22 078102

[1]	Lazar H R, Misra V, Johnson R S and Lucovsky G 2001 Appl. Phys. Lett. 79 973
[2]	Liu L, Yang Y T and Ma X Y 2011 Chin. Phys. B 20 127204
[3]	Tang X Y, Song Q W, Zhang Y M, Zhang Y M, Jia R X, Lü H L and Wang Y H 2012 Chin. Phys. B 21 087701
[4]	Taube A, Gieraltowskac S, Gutta T, Malachowskia T, Pasternaka I, Wojciechowskic T, Rzodkiewicza W, Sawickic M and Piotrowska A 2011 Acta Phys. Pol. A 119 696
[5]	Komatsu N, Satoh T, Honjo M, Futatuki T, Masumoto K, Kimura C and Aoki H 2011 Appl. Surf. Sci. 257 8307
[6]	Singh R 2006 Microelectron Reliab. 46 713
[7]	Song Q W, Zhang Y M, Han J S, Philip T, Sima D, Zhang Y M, Tang X Y and Guo H 2013 Chin. Phys. B 22 027302
[8]	Groner M D, Elam J W, Fabreguette H H and George S M 2002 Thin Solid Films 413 186
[9]	Avice M, Grossner U, Pintilie I, Svensson B G, Servidori M, Nipoti R, Nilsen O and Fjellvag H 2007 J. Appl. Phys. 102 054513
[10]	Avice M, Grossner U, Nilsen O, Christensen J S, Fjellvag H and Svensson B G 2006 Phys. Scr. 126 9
[11]	Avice M, Grossner U, Nilsen O, Christensen J S, Fjellvag H and Svensson B G 2006 Mater. Sci. Forum. 527 1067
[12]	Perevalov T V, Tereshenko O E, Gritsenko V A, Pustovarov V A, Yelisseyev A P, Park C, Han J H and Lee C 2010 J. Appl. Phys. 108 013501
[13]	Weber J R, Janotti A and van de Walle C G 2011 J. Appl. Phys. 109 033715
[14]	Petrik P, Szilagyi E, Lohner T, Battistig B, Fried M, Dobrik G and Biro L P 2009 J. Appl. Phys. 106 123506
[15]	Saito S, hisamoto D, Kimura S and Hiratani M 2003 International Electron Devices Meeting Technical Digest, December 8, 2003 Washinton DC, American, p. 797
[16]	Vermang B, Goverde H, Lorenz A, Uruena A, Vereecke G, Meersschaut J, Cornagliotti E, Rothschild A, John J, Poortmans J and Mertens R 2011 37th IEEE Photovoltaic Specialists Conference, June 19, 2011 Seattle, America, p. 3562
[17]	Correa S A, Marmitt G G, Bom N M, Rosa A T, Stedile F C, Radtke C, Soares G V, Baumvol I J R, Krug C and Gobbi A L 2009 Appl. Phys. Lett. 95 051916
[18]	Zhu Y Y, Fang Z B and Xu R 2011 J. Rare Earth. 29 958

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Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC

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Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC