Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As

doi:10.1088/1674-1056/22/2/027504

Abstract We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga_0.94Mn_0.06As devices by measuring the angle-dependent planar Hall resistance (PHR). Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields (below 1000 Gs, 1 Gs=10^-4 T), which can be explained by competition between Zeeman energy and magnetic anisotropic energy. It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga_0.94Mn_0.06As and the annealed one. The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing. This gives a useful way to tune the magnetic anisotropy of ultrathin (Ga,Mn)As devices.

Keywords: magnetic anisotropy planar Hall resistance ultrathin (Ga,Mn)As

Received: 18 September 2012
Revised: 17 October 2012
Accepted manuscript online:

PACS:	75.50.Pp	(Magnetic semiconductors)
	75.30.Gw	(Magnetic anisotropy)
	75.30.Hx	(Magnetic impurity interactions)
	75.47.-m	(Magnetotransport phenomena; materials for magnetotransport)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB922200); the National Natural Science Foundation of China (Grant No. 11174272); and the Engineering and Physical Sciences Research Council-National Natural Science Foundation Joint (Grant Nos. 10911130232/A0402).

Corresponding Authors: Wang Kai-You
E-mail: kywang@semi.ac.cn

Cite this article:

Li Yan-Yong (李炎勇), Wang Hua-Feng (汪华锋), Cao Yu-Fei (曹玉飞), Wang Kai-You (王开友) Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As 2013 Chin. Phys. B 22 027504

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Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As

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