Topological insulator nanostructures and devices

doi:10.1088/1674-1056/22/09/096104

Abstract Topological insulators’ properties and their potential device applications are reviewed. We also explain why topological insulator (TI) nanostructures are an important avenue for research and discuss some methods by which TI nanostructures are produced and characterized. The rapid development of high-quality TI nanostructures provides an ideal platform to exploit salient physical phenomena that have been theoretically predicted but not yet experimentally realized.

Keywords: topological insulators nanostructures quantum spin Hall effect Aharonov-Bohm effect

Received: 31 July 2013
Accepted manuscript online:

PACS:	61.46.-w	(Structure of nanoscale materials)
	62.25.-g	(Mechanical properties of nanoscale systems)
	64.70.kg	(Semiconductors)

Corresponding Authors: Xiu Fa-Xian
E-mail: faxian@fudan.edu.cn

Cite this article:

Xiu Fa-Xian (修发贤), Zhao Tong-Tong (赵彤彤) Topological insulator nanostructures and devices 2013 Chin. Phys. B 22 096104

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