Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃

doi:10.1088/1674-1056/21/6/066106

Abstract Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chemical vapor deposition (PECVD) technique using hydrogen-diluted SiH₄ at 250 ℃. The dependence of the crystallinity of the film on the hydrogen dilution ratio and the film thickness was investigated. Raman spectra show that the thickness of the initial amorphous incubation layer on silicon oxide gradually decreases with increasing hydrogen dilution ratio. High-resolution transmission electron microscopy reveals that the initial amorphous incubation layer can be completely eliminated at a hydrogen dilution ratio of 98%, which is lower than that needed for the growth of amorphous-layer-free nanocrystalline silicon using an excitation frequency of 13.56 MHz. More studies on the microstructure evolution of the initial amorphous incubation layer with hydrogen dilution ratios were performed using Fourier-transform infrared spectroscopy. It is suggested that the high hydrogen dilution, as well as the higher plasma excitation frequency, plays an important role in the formation of amorphous-layer-free nanocrystalline silicon films.

Keywords: nanocrystalline silicon amorphous incubation layer plasma enhanced chemical vapor deposition

Received: 21 December 2011
Revised: 26 February 2012
Accepted manuscript online:

PACS:	61.82.Rx	(Nanocrystalline materials)
	68.35.bj	(Amorphous semiconductors, glasses)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60806046), the Natural Science Foundation of Guangdong Province of China (Grant No. S2011010001853), and the FDYT (Grant No. LYM10099).

Corresponding Authors: Guo Yan-Qing
E-mail: yqguo@hstc.edu.cn

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Guo Yan-Qing(郭艳青), Huang Rui(黄锐), Song Jie(宋捷), Wang Xiang(王祥), Song Chao(宋超), and Zhang Yi-Xiong(张奕雄) Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃ 2012 Chin. Phys. B 21 066106

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Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃

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