Please wait a minute...
Chin. Phys. B, 2012, Vol. 21(6): 066106    DOI: 10.1088/1674-1056/21/6/066106

Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃

Guo Yan-Qing(郭艳青), Huang Rui(黄锐), Song Jie(宋捷), Wang Xiang(王祥), Song Chao(宋超), and Zhang Yi-Xiong(张奕雄)
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China
Abstract  Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chemical vapor deposition (PECVD) technique using hydrogen-diluted SiH4 at 250 ℃. The dependence of the crystallinity of the film on the hydrogen dilution ratio and the film thickness was investigated. Raman spectra show that the thickness of the initial amorphous incubation layer on silicon oxide gradually decreases with increasing hydrogen dilution ratio. High-resolution transmission electron microscopy reveals that the initial amorphous incubation layer can be completely eliminated at a hydrogen dilution ratio of 98%, which is lower than that needed for the growth of amorphous-layer-free nanocrystalline silicon using an excitation frequency of 13.56 MHz. More studies on the microstructure evolution of the initial amorphous incubation layer with hydrogen dilution ratios were performed using Fourier-transform infrared spectroscopy. It is suggested that the high hydrogen dilution, as well as the higher plasma excitation frequency, plays an important role in the formation of amorphous-layer-free nanocrystalline silicon films.
Keywords:  nanocrystalline silicon      amorphous incubation layer      plasma enhanced chemical vapor deposition  
Received:  21 December 2011      Revised:  26 February 2012      Accepted manuscript online: 
PACS:  61.82.Rx (Nanocrystalline materials) (Amorphous semiconductors, glasses)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60806046), the Natural Science Foundation of Guangdong Province of China (Grant No. S2011010001853), and the FDYT (Grant No. LYM10099).
Corresponding Authors:  Guo Yan-Qing     E-mail:

Cite this article: 

Guo Yan-Qing(郭艳青), Huang Rui(黄锐), Song Jie(宋捷), Wang Xiang(王祥), Song Chao(宋超), and Zhang Yi-Xiong(张奕雄) Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃ 2012 Chin. Phys. B 21 066106

[1] Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H and Zhao Y 2011 Chin. Phys. B 20 108801
[2] Chen K J, Huang X F, Xu J and Feng D 1992 Appl. Phys. Lett. 61 2069
[3] Shi Y, Saito K, Ishikuro H and Hiramoto T 1998 J. Appl. Phys. 84 2358
[4] Peng W B, Liu S Y, Xiao H B, Zhang C S, Shi M J, Zeng X B, Xu Y Y, Kong G L and Yu Y D 2009 Acta Phys. Sin. 58 5716 (in Chinese)
[5] Huang R, Lin X Y, Huang W Y, Yao R H, Yu Y P, Lin K X, Wei J H and Zhu Z S 2006 Thin Solid Films 513 380
[6] Xu J, Chen K J, Feng D, Miyazaki S and Hirose M 1996 Solid State Commun. 99 269
[7] Klein S, Finger F, Carius R and Stutzmann M 2005 J. Appl. Phys. 98 024905
[8] Kocka J, Mates T, Stuchlíkov? H, Stuchlík J and Fejfar A 2006 Thin Solid Films 501 107
[9] Matsuda A 2004 J. Non-Cryst. Solids 338-340 1
[10] Vallat-Sauvain E, Kroll U, Meier J, Shah A and Pohl J 2000 J. Appl. Phys. 87 3137
[11] Hou G F, Xue J M, Guo Q C, Sun J, Zhao Y, Geng X H and Li Y G 2007 Chin. Phys. 16 553
[12] Li J, Wang J, Yin M, Gao P, Chen Q, Li Y and He D 2008 J. Cryst. Growth 310 4340
[13] Chen Y S, Xu Y H, Gu J H, Lu J X, Yang S E and Gao X Y 2010 Chin. Phys. B 19 087206
[14] Danesh P, Pantchev B, Grambole D and Schmidt B 2002 Appl. Phys. Lett. 80 2463
[15] Gordijn A, Rath J K and Schropp R E I 2004 Appl. Phys. Lett. 85 5096
[16] Song J, Guo Y Q, Wang X, Ding H L and Huang R 2010 Acta Phys. Sin. 59 7378 (in Chinese)
[17] Park Y B and Rhee S W 2001 J. Appl. Phys. 90 217
[18] Zhou J H, Ikuta K, Yasuda T, Umeda T, Yamasaki S and Tanaka K 1997 Appl. Phys. Lett. 71 1534
[19] Han D X, Wang K, Owens J M, Gedvilas L, Nelson B, Habuchi H and Tanaka M 2003 J. Appl. Phys. 93 3776
[20] Vetterl O, Hapke P, Houben L, Finger F, Carius R and Wagner H 1999 J. Appl. Phys. 85 2991
[21] Amanatides E, Hammad A, Katsia E and Mataras D 2005 J. Appl. Phys. 97 073303
[1] A simple method to synthesize worm-like AlN nanowires and its field emission studies
Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志). Chin. Phys. B, 2021, 30(8): 087302.
[2] The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions
Chen Yong-Sheng(陈永生), Xu Yan-Hua(徐艳华), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), Yang Shi-E(杨仕娥), and Gao Xiao-Yong(郜小勇). Chin. Phys. B, 2010, 19(8): 087206.
[3] Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition
Wang Jin-Liang(王金良) and Wu Er-Xing(毋二省). Chin. Phys. B, 2007, 16(3): 848-853.
[4] Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing
Li Zhi-Gang(李志刚), Long Shi-Bing(龙世兵), Liu Ming(刘明), Wang Cong-Shun(王丛舜), Jia Rui(贾锐), Lv Jin(闾锦), and Shi Yi(施毅). Chin. Phys. B, 2007, 16(3): 795-798.
[5] Nanocrystalline silicon films prepared by laser-induced crystallization
Fu Guang-Sheng (傅广生), Yu Wei (于 威), Li She-Qiang (李社强), Hou Hai-Hong (侯海虹), Peng Ying-Cai (彭英才), Han Li (韩 理). Chin. Phys. B, 2003, 12(1): 75-78.
Li Jian (李健), Wang Li (王立), Huang Xin-fan (黄信凡), Jiang Ming (蒋明), Li Wei (李伟), Wang Zhao-ye (王朝晔), Xu Jun (徐骏), Liu Zhi-guo (刘治国), Chen Kun-ji (陈坤基). Chin. Phys. B, 2000, 9(7): 537-540.
No Suggested Reading articles found!