Nanocrystalline silicon films prepared by laser-induced crystallization
Fu Guang-Sheng (傅广生)a, Yu Wei (于 威)a, Li She-Qiang (李社强)a, Hou Hai-Hong (侯海虹)a, Peng Ying-Cai (彭英才)b, Han Li (韩 理)a
a College of Physics Science and Technology, Hebei University, Baoding 071002, China; b College of Electronic and Informational Engineering, Hebei University, Baoding, 071002, China
Abstract The excimer laser-induced crystallization technique has been used to investigate the preparation of nanocrystalline silicon (nc-Si) from amorphous silicon ($\alpha$-Si) thin films on silicon or glass substrates. The $\alpha$-Si films without hydrogen grown by pulsed-laser deposition are chosen as precursor to avoid the problem of hydrogen effluence during annealing. Analyses have been performed by scanning electron microscopy, atomic force microscopy, Raman scattering spectroscopy and high-resolution transmission--electron microscopy. Experimental results show that silicon nanocrystals can be formed through laser annealing. The growth characters of nc-Si are strongly dependent on the laser energy density. It is shown that the volume of the molten silicon predominates essentially the grain size of nc-Si, and the surface tension of the crystallized silicon is responsible for the mechanism of nc-Si growth.
Received: 21 June 2002
Revised: 12 September 2002
Accepted manuscript online:
Fund: Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 500084).
Cite this article:
Fu Guang-Sheng (傅广生), Yu Wei (于 威), Li She-Qiang (李社强), Hou Hai-Hong (侯海虹), Peng Ying-Cai (彭英才), Han Li (韩 理) Nanocrystalline silicon films prepared by laser-induced crystallization 2003 Chinese Physics 12 75
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