Abstract The current voltage (IV) characteristics are greatly influenced by the dispersion effects in AlGaN/GaN high electron mobility transistors. The direct current (DC) IV and pulsed IV measurements are performed to give a deep investigation into the dispersion effects, which are mainly related to the trap and self-heating mechanisms. The results show that traps play an important role in the kink effects, and high stress can introduce more traps and defects in the device. With the help of the pulsed IV measurements, the trapping effects and self-heating effects can be separated. The impact of time constants on the dispersion effects is also discussed. In order to achieve an accurate static DC IV measurement, the steady state of the bias points must be considered carefully to avoid the dispersion effects.
Pu Yan(蒲颜), Pang Lei(庞磊), Chen Xiao-Juan(陈晓娟), Yuan Ting-Ting(袁婷婷), Luo Wei-Jun(罗卫军), and Liu Xin-Yu(刘新宇) Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors 2011 Chin. Phys. B 20 097305
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Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress Yi-Dong Yuan(原义栋), Dong-Yan Zhao(赵东艳), Yan-Rong Cao(曹艳荣), Yu-Bo Wang(王于波), Jin Shao(邵瑾), Yan-Ning Chen(陈燕宁), Wen-Long He(何文龙), Jian Du(杜剑), Min Wang(王敏), Ye-Ling Peng(彭业凌), Hong-Tao Zhang(张宏涛), Zhen Fu(付振), Chen Ren(任晨), Fang Liu(刘芳), Long-Tao Zhang(张龙涛), Yang Zhao(赵扬), Ling Lv(吕玲), Yi-Qiang Zhao(赵毅强), Xue-Feng Zheng(郑雪峰), Zhi-Mei Zhou(周芝梅), Yong Wan(万勇), and Xiao-Hua Ma(马晓华). Chin. Phys. B, 2021, 30(7): 077305.
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