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Detailed balance limit efficiency of silicon intermediate band solar cells |
Cao Quan(曹权), Ma Zhi-Hua(马志华), Xue Chun-Lai(薛春来),Zuo Yu-Hua(左玉华)†, and Wang Qi-Ming(王启明) |
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China |
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Abstract The detailed balance method is used to study the potential of the intermediate band solar cell (IBSC), which can improve the efficiency of the Si-based solar cell with a bandgap between 1.1 eV to 1.7 eV. It shows that a crystalline silicon solar cell with an intermediate band located at 0.36 eV below the conduction band or above the valence band can reach a limiting efficiency of 54% at the maximum light concentration, improving greatly than 40.7% of the Shockley—Queisser limit for the single junction Si solar cell. The simulation also shows that the limiting efficiency of the silicon-based solar cell increases as the bandgap increases from 1.1 eV to 1.7 eV, and the amorphous Si solar cell with a bandgap of 1.7 eV exhibits a radiative limiting efficiency of 62.47%, having a better potential.
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Received: 01 March 2011
Revised: 12 May 2011
Accepted manuscript online:
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PACS:
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71.28.+d
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(Narrow-band systems; intermediate-valence solids)
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71.55.-i
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(Impurity and defect levels)
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84.60.Jt
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(Photoelectric conversion)
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Cite this article:
Cao Quan(曹权), Ma Zhi-Hua(马志华), Xue Chun-Lai(薛春来),Zuo Yu-Hua(左玉华), and Wang Qi-Ming(王启明) Detailed balance limit efficiency of silicon intermediate band solar cells 2011 Chin. Phys. B 20 097103
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