Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

doi:10.1088/1674-1056/20/12/127303

Abstract In this article, an organic thin-film field-effect transistor (OTFFET) with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current (AC) resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage (V_DS) less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.

Keywords: organic thin-film field-effect transistor alternating-current resistance Ohmic contact

Received: 24 December 2010
Revised: 09 March 2011
Accepted manuscript online:

PACS:	73.40.Cg	(Contact resistance, contact potential)
	73.40.Rw	(Metal-insulator-metal structures)
	73.61.Ph	(Polymers; organic compounds)

Fund: Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant Nos. 10974013 and 60978060), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090009110027), the Natural Science Foundation of Beijing, China (Grant No. 1102028), the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60825407), and Beijing Municipal Science and Technology Commission (Grant No. Z090803044009001).

Cite this article:

Chen Yue-Ning(陈跃宁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Yin Fei-Fei(尹飞飞), Zhang Cheng-Wen(张成文), Jiao Bi-Yuan(焦碧媛), and Dong Yu-Hang (董宇航) Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance 2011 Chin. Phys. B 20 127303

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Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

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