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Chin. Phys. B, 2010, Vol. 19(9): 097502    DOI: 10.1088/1674-1056/19/9/097502

Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

Tan Yong-Sheng(谭永胜)a)b), Fang Ze-Bo(方泽波)b), Chen Wei(陈伟)b), and He Pi-Mo(何丕模)a)†
a Department of Physics, Zhejiang University, Hangzhou 310027, China; b Department of Physics, Shaoxing University, Shaoxing 312000, China
Abstract  This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.
Keywords:  Eu-doped ZnO films      ferromagnetism      radio-frequency magnetic sputtering  
Received:  22 December 2009      Revised:  25 March 2010      Accepted manuscript online: 
PACS:  7550P  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10774129 and 60425411) and the Ministry of Science and Technology of China.

Cite this article: 

Tan Yong-Sheng(谭永胜), Fang Ze-Bo(方泽波), Chen Wei(陈伟), and He Pi-Mo(何丕模) Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering 2010 Chin. Phys. B 19 097502

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