Size dependence of biexciton binding energy in single InAs/GaAs quantum dots
Dou Xiu-Ming(窦秀明)a), Sun Bao-Quan(孙宝权)a)†, Huang She-Song(黄社松)a), Ni Hai-Qiao(倪海桥)a), Niu Zhi-Chuan(牛智川)a), Yang Fu-Hua(杨富华)a), and Jia Rui(贾锐)b)
aSKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; bLaboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show ``binding'' and ``antibinding'' properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler--London method.
Received: 27 June 2008
Revised: 27 November 2008
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundations of China (Grant Nos O69C041001 and
2007CB924904).
Cite this article:
Dou Xiu-Ming(窦秀明), Sun Bao-Quan(孙宝权), Huang She-Song(黄社松), Ni Hai-Qiao(倪海桥), Niu Zhi-Chuan(牛智川), Yang Fu-Hua(杨富华), and Jia Rui(贾锐) Size dependence of biexciton binding energy in single InAs/GaAs quantum dots 2009 Chin. Phys. B 18 2258
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