Ultraviolet laser-induced voltages in LaSrAlO4 single crystal
ü Zhi-Qing(吕志清)a)b), Zhao Kun(赵昆)a)b)c)† , Zhao Hui(赵卉)c), Zhao Song-Qing(赵嵩卿)a), and Zhou Qing-Li(周庆莉)d)
a Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China; b State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, China; c Department of Materials Science and Engineering, China University of Petroleum, Beijing 102249, China; d Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048, China
Abstract Laser-induced ultrafast photovoltaic effect is observed in LaSrAlO4 single crystal at ambient temperature without any applied bias. An open-circuit photovoltage is obtained when the wafer is irradiated by a 248-nm-KrF laser pulse of 20 ns duration. The response time and full width at half maximum of the photovoltage pulse are 6 ns and 19 ns, respectively, indicating that LaSrAlO4 single crystal has potential application in ultraviolet detector.
Received: 07 March 2009
Revised: 26 May 2009
Accepted manuscript online:
(Photodetectors (including infrared and CCD detectors))
Fund: Project supported by NCET (Grant No
NCET-08-0841), the National Natural Science Foundation of China
(Grant Nos 50672132 and 60778034), RFDP (Grant No 200804250006), Key
Program of Ministry of Education, China (Grant No 107020), and
Beijng Natural Science
Cite this article:
ü Zhi-Qing(吕志清), Zhao Kun(赵昆), Zhao Hui(赵卉), Zhao Song-Qing(赵嵩卿), and Zhou Qing-Li(周庆莉) Ultraviolet laser-induced voltages in LaSrAlO4 single crystal 2009 Chin. Phys. B 18 4521
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