Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

doi:10.1088/1674-1056/24/10/107307

Abstract

Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

Keywords: resistance reduction Schottky junction photovoltaic effect

Received: 19 March 2015
Revised: 27 April 2015
Accepted manuscript online:

PACS:	73.40.Sx	(Metal-semiconductor-metal structures)
	73.50.Pz	(Photoconduction and photovoltaic effects)
	74.25.F-	(Transport properties)

Fund:

Project supported by the National Basic Research Program of China (Grant No. 2011CB921801) and the National Natural Science Foundation of China (Grant No. 111374348).

Corresponding Authors: Wang Shuan-Hu
E-mail: wshtzg@126.com

Cite this article:

Wang Shuan-Hu (王拴虎), Zhang Xu (张勖), Zou Lv-Kuan (邹吕宽), Zhao Jing (赵靓), Wang Wen-Xin (王文鑫), Sun Ji-Rong (孙继荣) Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction 2015 Chin. Phys. B 24 107307

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Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

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