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Chin. Phys. B, 2015, Vol. 24(10): 107307    DOI: 10.1088/1674-1056/24/10/107307

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Wang Shuan-Hu (王拴虎)a, Zhang Xu (张勖)a, Zou Lv-Kuan (邹吕宽)a, Zhao Jing (赵靓)a, Wang Wen-Xin (王文鑫)a b, Sun Ji-Rong (孙继荣)a
a Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
b State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

Keywords:  resistance reduction      Schottky junction      photovoltaic effect  
Received:  19 March 2015      Revised:  27 April 2015      Accepted manuscript online: 
PACS:  73.40.Sx (Metal-semiconductor-metal structures)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
  74.25.F- (Transport properties)  

Project supported by the National Basic Research Program of China (Grant No. 2011CB921801) and the National Natural Science Foundation of China (Grant No. 111374348).

Corresponding Authors:  Wang Shuan-Hu     E-mail:

Cite this article: 

Wang Shuan-Hu (王拴虎), Zhang Xu (张勖)​, Zou Lv-Kuan (邹吕宽), Zhao Jing (赵靓), Wang Wen-Xin (王文鑫)​, Sun Ji-Rong (孙继荣) Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction 2015 Chin. Phys. B 24 107307

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