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Chinese Physics, 2006, Vol. 15(4): 839-841    DOI: 10.1088/1009-1963/15/4/029
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Ultraviolet photovoltaic characteristic of MgB2 thin film

Zhao Song-Qing (赵嵩卿), Zhou Yue-Liang (周岳亮), Zhao Kun (赵昆), Wang Shu-Fang (王淑芳), Chen Zheng-Hao (陈正豪), Lü Hui-Bin (吕惠宾), Jin Kui-Juan (金奎娟), Cheng Bo-Lin (程波林), Yang Guo-Zhen (杨国桢)
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  Fast photoelectric effects have been observed in MgB2 thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was $\sim $185 ns for the photovoltaic pulse when the film was irradiated by a 308 nm laser pulse of 25 ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB2 film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.
Keywords:  MgB2      photovoltaic effect      thin film   
Received:  17 November 2005      Revised:  16 December 2005      Accepted manuscript online: 
PACS:  74.25.Fy  
  61.05.cp (X-ray diffraction)  
  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  74.70.Ad (Metals; alloys and binary compounds)  
  74.78.-w (Superconducting films and low-dimensional structures)  

Cite this article: 

Zhao Song-Qing (赵嵩卿), Zhou Yue-Liang (周岳亮), Zhao Kun (赵昆), Wang Shu-Fang (王淑芳), Chen Zheng-Hao (陈正豪), Lü Hui-Bin (吕惠宾), Jin Kui-Juan (金奎娟), Cheng Bo-Lin (程波林), Yang Guo-Zhen (杨国桢) Ultraviolet photovoltaic characteristic of MgB2 thin film 2006 Chinese Physics 15 839

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