a Key Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; c International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
Abstract We have investigated the transport and ultraviolet photovoltaic properties of Fe$_{3}$O$_{4}$ thin films grown on glass substrates by facing-target sputtering technique. The nonlinear dependence of current-density on voltage suggests that the transport process is most likely the tunnelling process and grain boundaries act as barriers. Furthermore, nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for Fe$_{3}$O$_{4}$ film under ultraviolet laser, since the energy gap of Fe$_{3}$O$_{4}$ is smaller than the ultraviolet photon energy. And then the built-in electric field near the grain boundaries will separate carriers, leading to the appearance of an instant photovoltage.
Received: 31 May 2005
Revised: 19 September 2005
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 10334070 and 50371102) and China Postdoctoral Science Foundation.
Cite this article:
Zhao Kun (赵昆), Feng Jia-Feng (丰家峰), Huang Yan-Hong (黄延红), Zhao Jian-Gao (赵见高), Lü Hui-Bin (吕惠宾), Han Xiu-Feng (韩秀峰), Zhan Wen-Shan (詹文山) Origin of ultraviolet photovoltaic effect in Fe3O4 thin films 2005 Chinese Physics 14 2595
The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). Chin. Phys. B, 2022, 31(4): 048503.
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