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Chin. Phys. B, 2008, Vol. 17(9): 3495-3498    DOI: 10.1088/1674-1056/17/9/059
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Temperature-driven spin reorientation transitionof magnetron sputtered nickel thin film

Song Xiao-Hui(宋小会) and Zhang Dian-Lin(张殿琳)
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  The temperature-driven spin reorientation transition of magnetron sputtered Ni/Si (111) systems has been studied. The relationship between ac initial susceptibility and temperature of nickel films with different thicknesses shows that the magnetization orientation changes from in-plane to out-of-plane with the increase of temperature. The temperature dependence of magnetoelastic, magneto-crystalline, and magnetostatic anisotropies determines the direction of the reorientation transition. The temperature-driven spin reorientation transition is supported by Hall coefficient measurements which show that its temperature dependence is similar to that of susceptibility.
Keywords:  magnetic anisotropy      spin reorientation transition      ac initial susceptibility  
Received:  27 March 2008      Revised:  07 April 2008      Accepted manuscript online: 
PACS:  75.70.Ak (Magnetic properties of monolayers and thin films)  
  72.15.Gd (Galvanomagnetic and other magnetotransport effects)  
  75.30.Cr (Saturation moments and magnetic susceptibilities)  
  75.30.Gw (Magnetic anisotropy)  
  75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))  
  75.80.+q (Magnetomechanical effects, magnetostriction)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10334080).

Cite this article: 

Song Xiao-Hui(宋小会) and Zhang Dian-Lin(张殿琳) Temperature-driven spin reorientation transitionof magnetron sputtered nickel thin film 2008 Chin. Phys. B 17 3495

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