Please wait a minute...
Chinese Physics, 2006, Vol. 15(6): 1370-1373    DOI: 10.1088/1009-1963/15/6/040
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

n-type ZnS used as electron transport material in organic light-emitting diodes

Du Peng (杜鹏), Zhang Xi-Qing (张希清), Sun Xue-Bai (孙学柏), Yao Zhi-Gang (姚志刚), Wang Yong-Sheng (王永生)
Key Laboratory of Luminescence and Optical Information, Ministry of Education,China;Institute of Optoelectronic Technology, Beijing Jiaotong University,Beijing 100044, China
Abstract  This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes (OLEDs). The naphthyl-substituted benzidine derivative (NPB) and tris (8-hydroxyquinoline) aluminium (Alq$_{3})$ are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures: indium--tin-oxide (ITO)/NPB/Alq$_{3}$/ZnS/LiF/AL, ITO/NPB/Alq$_{3}$/LiF/AL and ITO/NPB/Alq$_{3}$/AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.
Keywords:  OLEDs      n-type ZnS      electron transport layer      luminance      efficiency  
Received:  21 November 2005      Revised:  09 January 2006      Accepted manuscript online: 
PACS:  78.60.Fi (Electroluminescence)  
  72.80.Ey (III-V and II-VI semiconductors)  
  73.40.-c (Electronic transport in interface structures)  
  85.60.Jb (Light-emitting devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60476005), the Scientific Research Foundation for Returned Overseas Chinese Scholars, the State Education Ministry, the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No 2003CB314707), and the Key Project of National Natural Science Foundation of China (Grant No 50532090).

Cite this article: 

Du Peng (杜鹏), Zhang Xi-Qing (张希清), Sun Xue-Bai (孙学柏), Yao Zhi-Gang (姚志刚), Wang Yong-Sheng (王永生) n-type ZnS used as electron transport material in organic light-emitting diodes 2006 Chinese Physics 15 1370

[1] Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films
Li-Cai Hao(郝礼才), Zi-Ang Chen(陈子昂), Dong-Yang Liu(刘东阳), Wei-Kang Zhao(赵伟康),Ming Zhang(张鸣), Kun Tang(汤琨), Shun-Ming Zhu(朱顺明), Jian-Dong Ye(叶建东),Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Chin. Phys. B, 2023, 32(3): 038101.
[2] Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets
Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Chin. Phys. B, 2023, 32(1): 018103.
[3] Enhancement of spin-orbit torque efficiency by tailoring interfacial spin-orbit coupling in Pt-based magnetic multilayers
Wenqiang Wang(王文强), Gengkuan Zhu(朱耿宽), Kaiyuan Zhou(周恺元), Xiang Zhan(战翔), Zui Tao(陶醉), Qingwei Fu(付清为), Like Liang(梁力克), Zishuang Li(李子爽), Lina Chen(陈丽娜), Chunjie Yan(晏春杰), Haotian Li(李浩天), Tiejun Zhou(周铁军), and Ronghua Liu(刘荣华). Chin. Phys. B, 2022, 31(9): 097504.
[4] High-sensitivity methane monitoring based on quasi-fundamental mode matched continuous-wave cavity ring-down spectroscopy
Zhe Li(李哲), Shuang Yang(杨爽), Zhirong Zhang(张志荣), Hua Xia(夏滑), Tao Pang(庞涛),Bian Wu(吴边), Pengshuai Sun(孙鹏帅), Huadong Wang(王华东), and Runqing Yu(余润磬). Chin. Phys. B, 2022, 31(9): 094207.
[5] A 658-W VCSEL-pumped rod laser module with 52.6% optical efficiency
Xue-Peng Li(李雪鹏), Jing Yang(杨晶), Meng-Shuo Zhang(张梦硕), Tian-Li Yang(杨天利), Xiao-Jun Wang(王小军), and Qin-Jun Peng(彭钦军). Chin. Phys. B, 2022, 31(8): 084207.
[6] Large aperture phase-coded diffractive lens for achromatic and 16° field-of-view imaging with high efficiency
Gu Ma(马顾), Peng-Lei Zheng(郑鹏磊), Zheng-Wen Hu(胡正文), Suo-Dong Ma(马锁冬), Feng Xu(许峰), Dong-Lin Pu(浦东林), and Qin-Hua Wang(王钦华). Chin. Phys. B, 2022, 31(7): 074210.
[7] Analysis of identification methods of key nodes in transportation network
Qiang Lai(赖强) and Hong-Hao Zhang(张宏昊). Chin. Phys. B, 2022, 31(6): 068905.
[8] Efficient quantum private comparison protocol utilizing single photons and rotational encryption
Tian-Yi Kou(寇天翊), Bi-Chen Che(车碧琛), Zhao Dou(窦钊), Xiu-Bo Chen(陈秀波), Yu-Ping Lai(赖裕平), and Jian Li(李剑). Chin. Phys. B, 2022, 31(6): 060307.
[9] Advantage of populous countries in the trends of innovation efficiency
Dan-Dan Hu(胡淡淡), Xue-Jin Fang(方学进), and Xiao-Pu Han(韩筱璞). Chin. Phys. B, 2022, 31(6): 068903.
[10] Efficient quantum private comparison protocol based on one direction discrete quantum walks on the circle
Jv-Jie Wang(王莒杰), Zhao Dou(窦钊), Xiu-Bo Chen(陈秀波), Yu-Ping Lai(赖裕平), and Jian Li(李剑). Chin. Phys. B, 2022, 31(5): 050308.
[11] Applications and functions of rare-earth ions in perovskite solar cells
Limin Cang(苍利民), Zongyao Qian(钱宗耀), Jinpei Wang(王金培), Libao Chen(陈利豹), Zhigang Wan(万志刚), Ke Yang(杨柯), Hui Zhang(张辉), and Yonghua Chen(陈永华). Chin. Phys. B, 2022, 31(3): 038402.
[12] Analysis of the generation mechanism of the S-shaped JV curves of MoS2/Si-based solar cells
He-Ju Xu(许贺菊), Li-Tao Xin(辛利桃), Dong-Qiang Chen(陈东强), Ri-Dong Cong(丛日东), and Wei Yu(于威). Chin. Phys. B, 2022, 31(3): 038503.
[13] High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching
Xinchuang Zhang(张新创), Bin Hou(侯斌), Fuchun Jia(贾富春), Hao Lu(芦浩), Xuerui Niu(牛雪锐), Mei Wu(武玫), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2022, 31(2): 027301.
[14] Enrichment of microplastic pollution by micro-nanobubbles
Jing Wang(王菁), Zihan Wang(王子菡), Fangyuan Pei(裴芳源), and Xingya Wang(王兴亚). Chin. Phys. B, 2022, 31(11): 118104.
[15] TiO2/SnO2 electron transport double layers with ultrathin SnO2 for efficient planar perovskite solar cells
Can Li(李灿), Hongyu Xu(徐宏宇), Chongyang Zhi(郅冲阳), Zhi Wan(万志), and Zhen Li(李祯). Chin. Phys. B, 2022, 31(11): 118802.
No Suggested Reading articles found!