Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire
Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Yin Sheng-Yi (阴生毅), Rong Yan-Dong (荣延栋), Zhang Wen-Li (张文理), Hu Yue-Hui (胡跃辉)
Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
Abstract The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability, and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71$\times $105.
Received: 21 September 2004
Revised: 29 November 2004
Accepted manuscript online:
Fund: Project supported by the National Basic Research Program of China (Grant No G2000028201-1)
Cite this article:
Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Yin Sheng-Yi (阴生毅), Rong Yan-Dong (荣延栋), Zhang Wen-Li (张文理), Hu Yue-Hui (胡跃辉) Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire 2005 Chinese Physics 14 834
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