Quantum confinement analysis of nanostructures in oxidation of SiGe alloys
Huang Wei-Qi (黄伟其)ab, Liu Shi-Rong (刘世荣)b
a Department of Physics, Guizhou University, Guiyang 550025, China; b Analytical Electron Microscope Lab, Chinese Academy of Sciences, Guiyang 550003, China
Abstract We report the investigation on the oxidation behaviour of Si$_{1-x}$Ge$_x$ alloys (x=0.05, 0.15, and 0.25). It was found for the first time that a nanocap (thickness: 1.6－2.0nm) was formed on the oxide film after fast oxidation. Some new peaks in photoluminescence spectra were discovered, which could be related to the Ge nanocap, the Ge nanolayer (thickness: 0.8－1.2nm) and the Ge nanoparticles (with various diameters from 2.6nm to 7.4nm), respectively. A suitable model and several new calculating formulae combined with the Unrestricted Hartree－Fock－Roothaan (UHFR) method and quantum confinement analysis have been proposed to interpret the PL spectra and the nanostructure mechanism in the oxide and Ge segregation.
Received: 15 October 2003
Revised: 16 January 2004
Accepted manuscript online:
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