Abstract Between source/drain and gate of SiC Schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strongly affects on the device performance. In this paper the effect of sidewall on the performance of 6H-SiC SBSD-NMOSFET is simulated with the 2D simulator MEDICI. The simulated results show that a sidewall with width less than 0.1μm slightly affects the device performance. However, when the width of sidewall exceeds 0.1μm, the conduction does not occur until the drain voltage is high enough and saturation current sharply decreases. The effect of the sidewall on device performance can be reduced by decreasing the doping concentration in the epitaxial layer.
Received: 31 January 2004
Revised: 01 March 2004
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60276047) and Key Laboratory Foundation of China (Grant No 51432050101DZ01).
Cite this article:
Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Gao Jin-Xia (郜锦侠) Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs 2004 Chinese Physics 13 1110
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