A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films
Ma Shu-Yi (马书懿)a, Chen Hui (陈辉)a, Xiao Yong (萧勇)b, Ma Zi-Jun (马自军)a, Sun Ai-Min (孙爱民)a
a Department of Physics, Northwest Normal University, Lanzhou 730070, China; b Development Company of Science and Technology, Northwest Normal University, Lanzhou 730070, China
Abstract Ge/SiO$_2$ and Si/SiO$_2$ films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO$_2$/p-Si and Au/Si/SiO$_2$/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO$_2$/p-Si and Au/Si/SiO$_2$/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650－660 nm. The EL mechanisms of the structures are discussed.
Received: 21 February 2003
Revised: 01 August 2003
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60276015), the Natural Science Foundation of Gansu Province (Grant No ZS021-A25-031-C), the Project of Chinese Ministry of Education, and the Foundation of Northwest Normal Un
Cite this article:
Ma Shu-Yi (马书懿), Chen Hui (陈辉), Xiao Yong (萧勇), Ma Zi-Jun (马自军), Sun Ai-Min (孙爱民) A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films 2004 Chinese Physics 13 264
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