Abstract We report on Raman scattering of VO$_2$ films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO$_2$ films, compared with the stoichiometry VO$_2$ films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO$_2$ films is discussed.
Received: 04 June 2003
Revised: 11 September 2003
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50072045), and the Foundation of Center for Condensed Matter Physics.
Cite this article:
Yuan Hong-Tao (袁宏韬), Feng Ke-Cheng (冯克成), Wang Xue-Jin (王学进), Li Chao (李超), He Chen-Juan (何琛娟), Nie Yu-Xin (聂玉昕) Effect of nonstoichiometry on Raman scattering of VO2 films 2004 Chinese Physics 13 82
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