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Chinese Physics, 2002, Vol. 11(1): 66-71    DOI: 10.1088/1009-1963/11/1/314
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Magnetization reversal mechanism of magnetic tunnel junctions

Liu Cun-Ye (刘存业)ab, Li Jian (李建)a, Wang Yue (王跃)a, Chen Jian-Yong (陈建勇)a, Xu Qing-Yu (徐庆宇)b, Ni Gang (倪刚)b, Sang Hai (桑海)b, Du You-Wei (都有为)b
a Department of Physics, Southwest China Normal University, Chongqing 400715, China; b State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
Abstract  Using the ion-beam-sputtering technique, we have fabricated Fe/Al2O3/Fe magnetic tunnelling junctions (MTJs). We have observed double-peaked shapes of curves, which have a level summit and a symmetrical feature, showing the magnetoresistance of the junction as a function of applied field. We have measured the tunnel conductance of MTJs which have insulating layers of different thicknesses. We have studied the dependence of the magnetoresistance of MTJs on tunnel conductance. The microstructures of hard- and soft-magnetic layers and interfaces of ferromagnets and insulators were probed. Analysing the influence of MJT microstructures, including those having clusters or/and granules in magnetic and non-magnetic films, a magnetization reversal mechanism (MRM) is proposed, which suggests that the MRM of tunnelling junctions may be explained by using a group-by-group reversal model of magnetic moments of the mesoscopical particles. We discuss the influence of MTJ microstructures, including those with clusters or/and granules in the ferromagnetic and non-magnetic films, on the MRM.
Keywords:  tunnelling junction      magnetoresistance      spin-dependent scattering  
Received:  02 April 2001      Revised:  22 August 2001      Accepted manuscript online: 
PACS:  75.60.Jk (Magnetization reversal mechanisms)  
  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
  81.15.Cd (Deposition by sputtering)  
  73.50.Jt (Galvanomagnetic and other magnetotransport effects)  
  75.30.Cr (Saturation moments and magnetic susceptibilities)  
  72.20.My (Galvanomagnetic and other magnetotransport effects)  
  73.40.Gk (Tunneling)  
Fund: Project supported by the State Key Program of Basic Research of China( Grant No. G1999064508), and the National Natural Science Foundation of China (Grant No. 19890310{4}).

Cite this article: 

Liu Cun-Ye (刘存业), Li Jian (李建), Wang Yue (王跃), Chen Jian-Yong (陈建勇), Xu Qing-Yu (徐庆宇), Ni Gang (倪刚), Sang Hai (桑海), Du You-Wei (都有为) Magnetization reversal mechanism of magnetic tunnel junctions 2002 Chinese Physics 11 66

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