Abstract The Ta/Si multilayers on (100) Si substrate have been studied over the annealing temper-ature range from 500 to 900℃ by X-ray diffraction and cross-section transmission electron microscopy. The periodicity of the multilayers becomes worse with increasing annealing tem-perature and disappears at 750℃. At 600℃, two kinds of modulation wavelength coexist because the size of several TaSi2 grains is larger than the contracted original modulation wavelength. The films are contracted after annealing. The largest contraction, at least 40nm decreasing in thickness, occurs at 600℃. When the annealing temperature is lower than 600℃, h-TaSi2 grains grow randomly and the growth is not affected by the substrate. At temperatures higher than 750℃, h-TaSi2 grows preferentially in [001] direction parallel to [100] axis of Si substrate. The appearance of texture depends on whether the atomic diffusion is short range or long range at the corresponding annealing temperature.
Received: 12 July 1993
Accepted manuscript online:
LU JIANG (卢江), ZHOU GUI-EN (周贵恩), ZHANG SHU-YUAN (张庶元), JIA YUN-BO (贾云波), LI FAN-QING (李凡庆), HUANG YUN-LAN (黄允兰), TAN SHUN (谭舜), SHI LEI (石磊), ZHANG YU-HENG (张裕恒) THE ANNEALING FEATURES OF Ta/Si MULTILAYER FILMS 1994 Acta Physica Sinica (Overseas Edition) 3 512
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