| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow |
| Bin Li(黎斌)2,3, Shan-Jin Huang(黄善津)2, Hai-Long Wang(王海龙)2, Hua-Long Wu(吴华龙)2, Zhi-Sheng Wu(吴志盛)1, Gang Wang(王钢)1, Hao Jiang(江灏)1 |
1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China;
3 The Open University of Guangdong & Guangdong Polytechnic Institute, Guangzhou 510091, China |
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Abstract The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.
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Received: 19 January 2017
Revised: 17 April 2017
Accepted manuscript online:
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PACS:
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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73.61.Ey
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(III-V semiconductors)
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78.66.Fd
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(III-V semiconductors)
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| Fund: Project supported by the Science and Technology Major Project of Guangdong Province, China (Grant Nos. 2014B010119003 and 2015B010112001). |
Corresponding Authors:
Hao Jiang
E-mail: stsjiang@mail.sysu.edu.cn
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| About author: 0.1088/1674-1056/26/8/ |
Cite this article:
Bin Li(黎斌), Shan-Jin Huang(黄善津), Hai-Long Wang(王海龙), Hua-Long Wu(吴华龙), Zhi-Sheng Wu(吴志盛), Gang Wang(王钢), Hao Jiang(江灏) Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow 2017 Chin. Phys. B 26 087307
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