Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (11): 117805    DOI: 10.1088/1674-1056/25/11/117805
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure
Yi Liu(刘毅)1, Kai-Gui Zhu(朱开贵)1,4, Hui-Cai Zhong(钟汇才)2, Zheng-Yong Zhu(朱正勇)3, Tao Yu(于涛)1, Su-De Ma(马苏德)1
1 School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;
2 Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
4 Key Laboratory of Micro-nano Measurement-Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191, China

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