Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (3): 038502    DOI: 10.1088/1674-1056/25/3/038502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Two-dimensional models of threshold voltage andsubthreshold current for symmetrical double-material double-gate strained Si MOSFETs
Yan-hui Xin(辛艳辉)1,2, Sheng Yuan(袁胜)1, Ming-tang Liu(刘明堂)1,Hong-xia Liu(刘红侠)2, He-cai Yuan(袁合才)3
1. Department of Information and Engineering, North China University of Water Resources and Electric Power, Zhengzhou 450046, China;
2. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;
3. Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450046, China

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