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Chin. Phys. B, 2012, Vol. 21(6): 066105    DOI: 10.1088/1674-1056/21/6/066105
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

Qin Xi-Feng(秦希峰)a)c), Li Hong-Zhen(李洪珍)b), Li Shuang(李双)a), Ji Zi-Wu(冀子武) c), Wang Hui-Ning(王绘凝)c), Wang Feng-Xiang(王凤翔)a), and Fu Gang(付刚)a)
a. College of Science, Shandong Jianzhu University, Jinan 250101, China;
b. College of Physics and Engineering, Qufu Normal University, Qufu 273165, China;
c. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Abstract  The annealing behaviour of 400 keV Er ions at a fluence of 2 × 1015 cm-2 implanted into silicon-on-insulator (SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He2+ ions with a multiple scattering model. It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres, successively, at 900 ℃, and that only a small number of the Er atoms segregated to the surface of the SOI sample, whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen. For the SOI sample co-implanted with Er and O ions, there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at 900 ℃.
Keywords:  Er ion implantation      silicon-on-insulator      annealing behavior      Rutherford backscattering technique  
Received:  08 October 2011      Revised:  02 November 2011      Accepted manuscript online: 
PACS:  61.80.Jh (Ion radiation effects)  
  61.72.sh (Impurity distribution)  
  82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
Fund: Project supported by the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2011AM011 and ZR2009FM031), the National Natural Science Foundation of China (Grant No. 11005070), and the Science and Technology Item of Shandong Provincial Housing and Urban-Rural Construction Department, China (Grant No. 2011YK033).
Corresponding Authors:  Fu Gang     E-mail:  xfqin@sdjzu.edu.cn

Cite this article: 

Qin Xi-Feng(秦希峰), Li Hong-Zhen(李洪珍), Li Shuang(李双), Ji Zi-Wu(冀子武), Wang Hui-Ning(王绘凝), Wang Feng-Xiang(王凤翔), and Fu Gang(付刚) Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature 2012 Chin. Phys. B 21 066105

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