Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

doi:10.1088/1674-1056/21/4/047802

Abstract The infrared reflectance spectra of both 4H-SiC substrates and epilayers are measured in a wave number range from 400 cm^-1 to 4000 cm^-1 using a Fourier-transform spectrometer. The thicknesses of the 4H-SiC epilayers and the electrical properties, including the free-carrier concentrations and the mobilities of both the 4H-SiC substrates and the epilayers, are characterized through full line-shape fitting analyses. The correlations of the theoretical spectral profiles with the 4H-SiC electrical properties in the 30 cm^-1-4000 cm^-1 and 400 cm^-1-4000 cm^-1 spectral regions are established by introducing a parameter defined as error quadratic sum. It is indicated that their correlations become stronger at a higher carrier concentration and in a wider spectral region (30 cm^-1-4000 cm^-1). These results suggest that the infrared reflectance technique can be used to accurately determine the thicknesses of the epilayers and the carrier concentrations, and the mobilities of both lightly and heavily doped 4H-SiC wafers.

Keywords: 4H-SiC infrared reflectance epilayer thickness electrical properties

Received: 16 August 2011
Revised: 11 October 2011
Accepted manuscript online:

PACS:	78.30.-j	(Infrared and Raman spectra)
	71.20.Nr	(Semiconductor compounds)

Fund: Project supported by the National Natural Science Foundation of China (Grand No. 60876003) and the Program of 2011 (2nd) Innovative Research Teams and Leading Talents in Guangdong Province of China.

Corresponding Authors: Dong Lin,donglin09@semi.ac.cn
E-mail: donglin09@semi.ac.cn

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Dong Lin(董林), Sun Guo-Sheng(孙国胜), Zheng Liu(郑柳), Liu Xing-Fang(刘兴昉), Zhang Feng(张峰), Yan Guo-Guo(闫果果), Zhao Wan-Shun(赵万顺), Wang Lei(王雷), Li Xi-Guang(李锡光), and Wang Zhan-Guo(王占国) Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy 2012 Chin. Phys. B 21 047802

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Characterization of 4H–SiC substrates and epilayers by Fourier transform infrared reflectance spectroscopy

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