Please wait a minute...
Chin. Phys. B
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Yield strength of attached copper film

Zhang Yan(张研) and Zhang Jian-Min(张建民)
College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China
Abstract  Variation of stress in attached copper film with an applied strain is measured by X-ray diffraction combined with a four-point bending method. A lower slope of the initial elastic segment of the curve of X-ray measured stress versus applied strain results from incomplete elastic strain transferred from the substrate to the film due to insufficiently strong interface cohesion. So the slope of the initial elastic segment of the X-ray stress (or X-ray strain directly) of the film against the substrate applied strain may be used to measure the film-substrate cohesive strength. The yield strength of the attached copper film is much higher than that of the bulk material and varies linearly with the inverse of the film thickness.
Keywords:  copper film      yield strength      X-ray diffraction  
Received:  08 January 2011      Revised:  29 March 2011      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  81.40.Lm (Deformation, plasticity, and creep)  
  68.60.Bs (Mechanical and acoustical properties)  
  61.05.cp (X-ray diffraction)  
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No. 2004CB619302) and the National Natural Science Foundation of China (Grant No. 51071098).

Cite this article: 

Zhang Yan(张研) and Zhang Jian-Min(张建民) Yield strength of attached copper film 2011 Chin. Phys. B 20 086802

[1] Murarka S P 1997 Mater. Sci. Eng. R 19 87
[2] Vinci R P, Marieb T N and Bravman J C 1993 Mater. Res. Soc. Symp. Proc. 308 297
[3] Bupphi rgesen P, Lee J K, Gleixner R and Li C Y 1992 Appl. Phys. Lett. 60 1706
[4] Gerth D, Katzer D and Schwarzer R 1992 Mater. Sci. Forum. 94 557
[5] Wang Y G, Chen D P, He H L, Wang L L and Jing F Q 2006 Acta Phys. Sin. 55 4202 (in Chinese)
[6] Hu J B, Tan H, Yu Y Y, Dai C D and Ran X W 2008 Acta Phys. Sin. 57 405 (in Chinese)
[7] Ruud J A, Josell D and Spaepen F 1993 J. Mater. Res. 8 112
[8] Reed D T and Dally J W 1993 J. Mater. Res. 8 1542
[9] Griffin A J, Brotzen F R and Dunn C F 1987 Thin Solid Films 150 237
[10] Doerner M F, Gardner D S and Nix W D 1986 J. Mater. Res. 1 845
[11] Nix W D 1989 Metal Trans. A 20 2217
[12] Gardner D S and Flinn P A 1988 IEEE Trans. Electron. Dev. 35 2160
[13] Chen J, Xu K W and He J W 1991 Phys. Test. Chem. Anal. Part A Phys. Test. 27 43 (in Chinese)
[14] Zhang J M and Xu K W 1999 J. Mater. Sci. Lett. 18 471
[15] Peng J X, Jing F Q, Wang L L and Li D H 2005 Acta Phys. Sin. 54 2194 (in Chinese)
[16] Wang Y G, He H L, Boustie M and Sekine T 2008 Acta Phys. Sin. 57 411 (in Chinese)
[17] Zhang J M, Xu K W and Zhang M R 2003 Acta Phys. Sin. 52 1234 (in Chinese)
[18] Zhang J M and Xu K W 2004 Chin. Phys. 13 205
[19] Venkatraman R, Bravman J C, Nix W D, Davies P W, Flinn P A and Fraser D B 1990 J. Electronic Mater. 19 1231
[20] Catlin A and Walker W P 1960 J. Appl. Phys. 31 2135
[21] Venkatraman B and Bravman J C 1992 J. Mater. Res. 7 2040
[1] Gamma induced changes in Makrofol/CdSe nanocomposite films
Ali A. Alhazime, M. ME. Barakat, Radiyah A. Bahareth, E. M. Mahrous,Saad Aldawood, S. Abd El Aal, and S. A. Nouh. Chin. Phys. B, 2022, 31(9): 097802.
[2] Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD
Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Chin. Phys. B, 2022, 31(3): 038103.
[3] Equal compressibility structural phase transition of molybdenum at high pressure
Lun Xiong(熊伦), Bin Li(李斌), Fang Miao(苗芳), Qiang Li (李强), Guangping Chen(陈光平), Jinxia Zhu(竹锦霞), Yingchun Ding(丁迎春), and Duanwei He(贺端威). Chin. Phys. B, 2022, 31(11): 116102.
[4] Pressure-induced phase transition in transition metal trifluorides
Peng Liu(刘鹏), Meiling Xu(徐美玲), Jian Lv(吕健), Pengyue Gao(高朋越), Chengxi Huang(黄呈熙), Yinwei Li(李印威), Jianyun Wang(王建云), Yanchao Wang(王彦超), and Mi Zhou(周密). Chin. Phys. B, 2022, 31(10): 106104.
[5] Origin of the low formation energy of oxygen vacancies in CeO2
Han Xu(许涵), Tongtong Shang(尚彤彤), Xuefeng Wang(王雪锋), Ang Gao(高昂), and Lin Gu(谷林). Chin. Phys. B, 2022, 31(10): 107102.
[6] Ultrafast structural dynamics using time-resolved x-ray diffraction driven by relativistic laser pulses
Chang-Qing Zhu(朱常青), Jun-Hao Tan(谭军豪), Yu-Hang He(何雨航), Jin-Guang Wang(王进光), Yi-Fei Li(李毅飞), Xin Lu(鲁欣), Ying-Jun Li(李英骏), Jie Chen(陈洁), Li-Ming Chen(陈黎明), and Jie Zhang(张杰). Chin. Phys. B, 2021, 30(9): 098701.
[7] Powder x-ray diffraction and Rietveld analysis of (C2H5NH3)2CuCl4
Yi Liu(刘义), Jun Shen(沈俊), Zunming Lu(卢遵铭), Baogen Shen(沈保根), and Liqin Yan(闫丽琴). Chin. Phys. B, 2021, 30(6): 067502.
[8] Low thermal expansion and broad band photoluminescence of Zr0.1Al1.9Mo2.9V0.1O12
Jun-Ping Wang(王俊平), Qing-Dong Chen(陈庆东), Li-Gang Chen(陈立刚), Yan-Jun Ji(纪延俊), You-Wen Liu(刘友文), and Er-Jun Liang(梁二军). Chin. Phys. B, 2021, 30(3): 036501.
[9] Analytical solution of crystal diffraction intensity
Wan-Li Shang(尚万里), Ao Sun(孙奥), Hua-Bin Du(杜华冰), Guo-Hong Yang(杨国洪), Min-Xi Wei(韦敏习), Xu-Fei Xie(谢旭飞), Xing-Sen Che(车兴森), Li-Fei Hou(侯立飞), Wen-Hai Zhang(张文海), Miao Li(黎淼), Jun Shi(施军), Feng Wang(王峰), Hai-En He(何海恩), Jia-Min Yang(杨家敏), Shao-En Jiang(江少恩), and Bao-Han Zhang(张保汉). Chin. Phys. B, 2021, 30(11): 116101.
[10] Investigations on ion implantation-induced strain in rotated Y-cut LiNbO3 and LiTaO3
Zhongxu Li(李忠旭), Kai Huang(黄凯), Yanda Ji(吉彦达), Yang Chen(陈阳), Xiaomeng Zhao(赵晓蒙), Min Zhou(周民), Tiangui You(游天桂), Shibin Zhang(张师斌), and Xin Ou(欧欣). Chin. Phys. B, 2021, 30(10): 106103.
[11] Characterization of structural transitions and lattice dynamics of hybrid organic-inorganic perovskite CH3NH3PbI3
Feng Jin(金峰), Jian-Ting Ji(籍建葶), Chao Xie(谢超), Yi-Meng Wang(王艺朦), Shu-Na He(贺淑娜), Lei Zhang(张磊), Zhao-Rong Yang(杨昭荣), Feng Yan(严锋), Qing-Ming Zhang(张清明). Chin. Phys. B, 2019, 28(7): 076102.
[12] Semiconductor-metal transition in GaAs nanowires under high pressure
Yi-Lan Liang(梁艺蓝), Zhen Yao(姚震), Xue-Tong Yin(殷雪彤), Peng Wang(王鹏), Li-Xia Li(李利霞), Dong Pan(潘东), Hai-Yan Li(李海燕), Quan-Jun Li(李全军), Bing-Bing Liu(刘冰冰), Jian-Hua Zhao(赵建华). Chin. Phys. B, 2019, 28(7): 076401.
[13] Isostructural phase transition-induced bulk modulus multiplication in dopant-stabilized ZrO2 solid solution
Min Wang(王敏), Wen-Shu Shen(沈文舒), Xiao-Dong Li(李晓东), Yan-Chun Li(李延春), Guo-Zhao Zhang(张国召), Cai-Long Liu(刘才龙), Lin Zhao(赵琳), Shu-Peng Lv(吕舒鹏), Chun-Xiao Gao(高春晓), Yong-Hao Han(韩永昊). Chin. Phys. B, 2019, 28(7): 076109.
[14] Low temperature Pmmm and C2/m phases in Sr2CuO3+δ high temperature superconductor
Hai-Bo Wang(王海波), Zhen-Lin Luo(罗震林), Yuan-Jun Yang(杨远俊), Qing-Qing Liu(刘清青), Si-Xia Hu(胡思侠), Meng-Meng Yang(杨蒙蒙), Chang-Qing Jin(靳常青), Chen Gao(高琛). Chin. Phys. B, 2019, 28(5): 056103.
[15] Effect of metal fluorides on chromium ions doped bismuth borate glasses for optical applications
L Haritha, K Chandra Sekhar, R Nagaraju, G Ramadevudu, Vasanth G Sathe, Md. Shareefuddin. Chin. Phys. B, 2019, 28(3): 038101.
No Suggested Reading articles found!