Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (9): 097106    DOI: 10.1088/1674-1056/19/9/097106
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors
Wang Shou-Guoa, Zhang Yi-Menb, Zhang Yu-Mingb
a School of Information Science and Technology, Northwest University, Xi'an 710127, China; b School of Microelectronics, Xidian University, Xi'an 710071, China

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