Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (11): 117307    DOI: 10.1088/1674-1056/19/11/117307
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation
Xue Shou-Bin, Huang Ru, Huang De-Tao, Wang Si-Hao, Tan Fei, Wang Jian, An Xia, Zhang Xing
Institute of Microelectronics, Peking University, Beijing 100871, China

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