Please wait a minute...
Chin. Phys. B, 2010, Vol. 19(11): 117308    DOI: 10.1088/1674-1056/19/11/117308
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study on the negative bias temperature instability effect under dynamic stress

Ma Xiao-Hua(马晓华)a)†, Cao Yan-Rong(曹艳荣) b), and Hao Yue(郝跃)c)
a School of Technical Physics, Xidian University, Xi'an 710071, China; b School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071, China; c Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
Abstract  This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency.
Keywords:  negative bias temperature instability      dynamic stress      recovery  
Received:  27 October 2009      Revised:  05 June 2010      Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009), the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

Cite this article: 

Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), and Hao Yue(郝跃) Study on the negative bias temperature instability effect under dynamic stress 2010 Chin. Phys. B 19 117308

[1] Massey J G 2004 Reliability Workshop Final Report p199
[2] Li Z H, Liu H X and Hao Y 2006 Chin. Phys. 15 833
[3] Cao Y R, Ma X H, Hao Y and Hu S G 2010 Chin. Phys. B 19 047307-1
[4] Mahapatra S and Kumar P B 2004 IEEE Trans. Electron Devices 51 1371
[5] Cao Y R, Ma X H, Hao Y, Zhang Y, Yu L, Zhu Z W and Chen H F 2007 em Chin. Phys. 16 1140
[6] Li Z H, Liu H X and Hao Y 2006 Acta Phys. Sin. 55 820 (in Chinese)
[7] Cao Y R, Hao Y, Ma X H and Hu S G 2009 Chin. Phys. B 18 309
[8] Schroder D K 2003 J. Appl. Phys. 94 1
[9] Hao Y, Li Z H and Liu H X 2007 Chin. Phys. 16 1445
[10] Rangan S, Mielke N and Yeh E C 2003 IEEE IEDM p341
[11] Chen G, Li M F, Ang C H, Zheng J Z and Kwong D L 2002 IEEE Electron Dev. Lett. 23 734
[12] Ershov M, Saxena S, Karbasi H, Winters S, Minehane S, Babcock J, Lindley R, Clifton P, Redford M and Shibkov A 2003 Appl. Phys. Lett. 83 1647
[13] Chen G, Chuah K Y, Li M F, Chan D S, Ang C H, Zheng J Z, Jin Y and Kwong D L 2003 Int. Reliability Phys. Symposium p196
[14] Huard V and Denais M 2004 Int. Reliability Phys. Symposium p40 endfootnotesize
[1] High performance SiC trench-type MOSFET with an integrated MOS-channel diode
Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏). Chin. Phys. B, 2023, 32(2): 028503.
[2] Fault-tolerant finite-time dynamical consensus of double-integrator multi-agent systems with partial agents subject to synchronous self-sensing function failure
Zhi-Hai Wu(吴治海) and Lin-Bo Xie(谢林柏). Chin. Phys. B, 2022, 31(12): 128902.
[3] Damage and recovery of fiber Bragg grating under radiation environment
Shi-Zhe Wen(温世喆), Wei-Chen Xiong(熊伟晨), Li-Ping Huang(黄力平), Zhen-Rui Wang(王镇锐), Xing-Bin Zhang(张兴斌), Zhen-Hui He(何振辉). Chin. Phys. B, 2018, 27(9): 090701.
[4] Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚). Chin. Phys. B, 2017, 26(10): 108503.
[5] Recovery of PMOSFET NBTI under different conditions
Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2015, 24(9): 097304.
[6] Statistical analysis of the temporal single-photon response of superconducting nanowire single photon detection
He Yu-Hao (何宇昊), Lü Chao-Lin (吕超林), Zhang Wei-Jun (张伟君), Zhang Lu (张露), Wu Jun-Jie (巫君杰), Chen Si-Jing (陈思井), You Li-Xing (尤立星), Wang Zhen (王镇). Chin. Phys. B, 2015, 24(6): 060303.
[7] Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET
Danijel Danković, Ninoslav Stojadinović, Zoran Prijić, Ivica Manić, Vojkan Davidović, Aneta Prijić, Snežana Djorić-Veljković, Snežana Golubović. Chin. Phys. B, 2015, 24(10): 106601.
[8] Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
Zhang Yue (张月), Zhuo Qing-Qing (卓青青), Liu Hong-Xia (刘红侠), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(5): 057304.
[9] Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
Cao Yan-Rong (曹艳荣), He Wen-Long (何文龙), Cao Cheng (曹成), Yang Yi (杨毅), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2014, 23(11): 117303.
[10] Physical analysis on improving the recovery accuracy of the Earth’s gravity field by a combination of satellite observations in along-track and cross-track directions
Zheng Wei (郑伟), Hsu Hou-Tse (许厚泽), Zhong Min (钟敏), Yun Mei-Juan (员美娟). Chin. Phys. B, 2014, 23(10): 109101.
[11] Analysis on the capacity degradation mechanism of a series lithium-ion power battery pack based on inconsistency of capacity
Wang Zhen-Po (王震坡), Liu Peng (刘鹏), Wang Li-Fang (王丽芳). Chin. Phys. B, 2013, 22(8): 088801.
[12] Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
Shi Lei (石磊), Feng Shi-Wei (冯士维), Guo Chun-Sheng (郭春生), Zhu Hui (朱慧), Wan Ning (万宁). Chin. Phys. B, 2013, 22(2): 027201.
[13] Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells
Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明). Chin. Phys. B, 2013, 22(2): 029402.
[14] Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps
Zhang Yue (张月), Pu Shi (蒲石), Lei Xiao-Yi (雷晓艺), Chen Qing (陈庆), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2013, 22(11): 117311.
[15] A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier
Wang Ying(王颖), Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲) . Chin. Phys. B, 2012, 21(5): 056104.
No Suggested Reading articles found!