Abstract Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320℃ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge(001) nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{103}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely.
Received: 09 January 2007
Revised: 28 September 2007
Accepted manuscript online:
PACS:
81.16.-c
(Methods of micro- and nanofabrication and processing)
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
Fund: STM study of In nanostructures formation
on Ge(001)\\[1.8mm] surface at different coverages and temperatures
Cite this article:
Qin Zhi-Hui(秦志辉), Shi Dong-Xia(时东霞), Pang Shi-Jin(庞世瑾), and Gao Hong-Jun(高鸿钧) STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures 2008 Chin. Phys. B 17 1055
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