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Chin. Phys. B, 2008, Vol. 17(2): 680-684    DOI: 10.1088/1674-1056/17/2/053
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction

Lu Hong-Xia(陆红霞), Dong Zheng-Chao(董正超), and Fu Hao(付浩)
Department of Physics, Huaiyin Teacher College, Huaiyin 223001, China
Abstract  Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the rough-scattering effect and spin-flip effect.
Keywords:  magnetoresistance      spin-flip effect      rough-scattering  
Received:  07 May 2007      Revised:  23 July 2007      Accepted manuscript online: 
PACS:  75.47.-m (Magnetotransport phenomena; materials for magnetotransport)  
  73.40.Gk (Tunneling)  
  72.25.Mk (Spin transport through interfaces)  
Fund: Project supported by the Program for Excellent Talents in Huaiyin Teachers College.

Cite this article: 

Lu Hong-Xia(陆红霞), Dong Zheng-Chao(董正超), and Fu Hao(付浩) Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction 2008 Chin. Phys. B 17 680

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