Chin. Phys. B
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Chin. Phys.  2004, Vol. 13 Issue (1): 111-114    DOI: 10.1088/1009-1963/13/1/020
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Transient saturation absorption spectroscopy excited near the band gap at high excitation carrier density in GaAs
Wang Dan-Linga, Jiang Hong-Binga, Yang Honga, Wu Song-Jiangb, Gong Qi-Huangb, Ji Ya-Linc, Lu Weic
a State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, and Department of Physics, Peking University, Beijing 100871, China; b State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, and Department of Physics, Peking University, Beijing 100871, China; State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; c State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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