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Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons |
| Ai-Gen Xie(谢爱根)1,2,3,†, Hong-Jie Dong(董红杰)1, and Yi-Fan Liu(刘亦凡)1 |
1 School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China;
2 Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science&Technology, Nanjing 210044, China;
3 Jiangsu international Joint Laboratory on Meteorological Photonics and Optoelectronic Detection, Nanjing University of Information Science&Technology, Nanjing 210044, China |
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Abstract The formulae for parameters of a negative electron affinity semiconductor (NEAS) with large mean escape depth of secondary electrons $\lambda $ (NEASLD) are deduced. The methods for obtaining parameters such as $\lambda $, $B$, $E_{\rm pom}$ and the maximum $\delta $ and $\delta $ at 100.0 ${\rm keV} \ge E_{\rm po} \ge 1.0 $ keV of a NEASLD with the deduced formulae are presented ($B$ is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter, $\delta $ is the secondary electron yield, $ E_{\rm po}$ is the incident energy of primary electrons and $E_{\rm pom}$ is the $E_{\rm po}$ corresponding to the maximum $\delta $). The parameters obtained here are analyzed, and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors. The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated, and it is concluded that the presented method of obtaining $\lambda $ is more accurate than that of obtaining the corresponding parameter for a NEAS with large $\lambda_{\rm ph}$ ($\lambda_{\rm ph}$ being the mean escape depth of photoelectrons), and that the presented method of calculating $B$ at $E_{\rm po} > 10.0 $ keV is more widely applicable for obtaining the corresponding parameters for a NEAS with large $\lambda_{\rm ph}$.
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Received: 09 April 2022
Revised: 30 June 2022
Accepted manuscript online: 02 July 2022
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PACS:
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81.90.+c
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(Other topics in materials science)
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79.20.Hx
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(Electron impact: secondary emission)
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79.20.Ap
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(Theory of impact phenomena; numerical simulation)
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29.20.-c
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(Accelerators)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11873013). |
Corresponding Authors:
Ai-Gen Xie
E-mail: xagth@126.com
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Cite this article:
Ai-Gen Xie(谢爱根), Hong-Jie Dong(董红杰), and Yi-Fan Liu(刘亦凡) Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons 2023 Chin. Phys. B 32 048102
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