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Chin. Phys. B, 2020, Vol. 29(4): 047701    DOI: 10.1088/1674-1056/ab7224
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands

Zhen-Jie Tang(汤振杰)1, Rong Li(李荣)2, Xi-Wei Zhang(张希威)1
1 School of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, China;
2 School of Mathematics and Statistics, Anyang Normal University, Anyang 455000, China
Abstract  Designed ZrxSi1-xO2 films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors. Compared to a single bent energy band, the bandgap structure with combining bent and flat energy bands exhibits larger memory window, faster program/erase speed, lower charge loss even at 200℃ for 104 s, and wider temperature insensitive regions. The tunneling thickness together with electron recaptured efficiency in the trapping layer, and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics. Therefore, the proposed ZrxSi1-xO2 with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications, taking into consideration of the trade-off between the operation speed and retention characteristics.
Keywords:  nonvolatile memory      bent and flat energy bands      charge trapping      memory capacitor  
Received:  19 November 2019      Revised:  15 January 2020      Accepted manuscript online: 
PACS:  77.55.df (For silicon electronics)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51402004) and the Science and Technology Research Key Project of Education Department of Henan Province of China (Grant No. 19A140001).
Corresponding Authors:  Zhen-Jie Tang     E-mail:  zjtang@hotmail.com

Cite this article: 

Zhen-Jie Tang(汤振杰), Rong Li(李荣), Xi-Wei Zhang(张希威) Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands 2020 Chin. Phys. B 29 047701

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