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Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction |
| Khasan S. Karimova b, Zubair Ahmadc, Farid Touatic, M. Mahroof-Tahird, M. Muqeet Rehmana, S. Zameer Abbasa |
a Ghulam Ishaq Khan Institute of Engineering Science and Technology, Topi, Swabi, KPK 23460, Pakistan;
b Center for Innovative Development of Science and New Technologies, Aini St. 299/2, Dushanbe 734063, Tajikistan;
c Department of Electrical Engineering, College of Engineering, Qatar University, Doha 2713, Qatar;
d Department of Chemistry and Earth Sciences, Qatar University, Doha 2713, Qatar |
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Abstract A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30-40 μm. For the current-voltage (I-V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases ～80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior.
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Received: 23 May 2015
Revised: 27 July 2015
Accepted manuscript online:
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PACS:
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61.66.Hq
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(Organic compounds)
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67.25.dp
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(Films)
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| Fund: Project supported by the GIK Institute of Engineering Science and Technology, Pakistan and Physical Technical Institute of Academy of Sciences of Tajikistan. |
Corresponding Authors:
Zubair Ahmad
E-mail: zubairtarar@qu.edu.qa
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Cite this article:
Khasan S. Karimov, Zubair Ahmad, Farid Touati, M. Mahroof-Tahir, M. Muqeet Rehman, S. Zameer Abbas Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction 2015 Chin. Phys. B 24 116102
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