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Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application |
Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫) |
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China |
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Abstract Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10-5 s to 10-2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.
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Received: 04 March 2013
Revised: 23 April 2013
Accepted manuscript online:
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.61.-r
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(Electrical properties of specific thin films)
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Fund: Project supported by the National Key Technology Research and Development Program of China (Grant No. 2009ZX02302-002), the National Natural Science Foundation of China (Grant No. 61274088), and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0127). |
Corresponding Authors:
Ding Shi-Jin
E-mail: sjding@fudan.edu.cn
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Cite this article:
Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫) Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application 2013 Chin. Phys. B 22 117308
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