Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

doi:10.1088/1674-1056/19/10/107302

Abstract Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.

Keywords: strained-Si gate stack double-gate MOSFETs short channel effect the drain-induced barrier-lowering

Received: 18 January 2010
Revised: 11 May 2010
Accepted manuscript online:

PACS:	71.20.Mq	(Elemental semiconductors)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.-c	(Electronic transport in interface structures)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010).

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Li Jin(李劲), Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博) Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs 2010 Chin. Phys. B 19 107302

[1]	Taur Y 2001 IEEE Trans. Electron Devices 48 2861
[2]	Chiage T K and Chen M L 2007 Solid State Electron 51 387
[3]	Djeffal F, Meguellati M and Benhaya A 2009 Physica E 41 1872
[4]	Tang X Y, Zhang Y M and Zhang Y M 2009 Acta Phys. Sin. 58 494 (in Chinese)
[5]	Thompson S E, Armstrong M and Auth C 2004 IEEE Electron Device Lett. 25 191
[6]	Yin H Z, Hobart K D and Peterson R L 2005 IEEE Trans. Electron Devices 52 2207
[7]	Mizuno T, Sugiyama N and Kurobe A 2001 IEEE Trans. Electron Devices 48 1612
[8]	Zhou X 2000 IEEE Trans. Electron Devices 47 113
[9]	Venkataraman V, Nawal S and Kumar M J 2007 IEEE Trans. Electron Devices 54 554
[10]	Kumar M J, Venkataraman V and Nawal S 2006 IEEE Trans. Electron Devices bf53 2500
[11]	Yong K K 1989 IEEE Trans. Electron Devices bf36 399
[12]	Sharma R K, Gupta M and Gupta R S 2009 Superlattices and Microstructures 45 91
[13]	Rim K, Anderson R and Boyd D 2003 Solid State Electronics 47 1133
[14]	Yang L F and Watling J R 2004 Semiconductor Science and Technology 19 1174

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Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

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