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Chin. Phys. B, 2010, Vol. 19(10): 107302    DOI: 10.1088/1674-1056/19/10/107302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo
Key Laboratory for Wide Bandgap Semiconductor Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.
Keywords:  the drain-induced barrier-lowering      gate stack double-gate MOSFETs      short channel effect      strained-Si  
Received:  18 January 2010      Revised:  11 May 2010      Published:  15 October 2010
PACS:  71.20.Mq (Elemental semiconductors)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.-c (Electronic transport in interface structures)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010).

Cite this article: 

Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs 2010 Chin. Phys. B 19 107302

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