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Chin. Phys. B, 2011, Vol. 20(1): 017301    DOI: 10.1088/1674-1056/20/1/017301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

Liu Hong-Xia(刘红侠), Li Jin(李劲),Li Bin(李斌), Cao Lei(曹磊),and Yuan Bo(袁博)
Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and drain-induced barrier-lowering of CMOS-based devices in nanometre scale.
Keywords:  strained-Si      double-gate MOSFET      surface potential      short-channel effect  
Received:  23 June 2010      Revised:  11 August 2010      Accepted manuscript online: 
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Major Science and Technology Innovation, Ministry of Education, China (Grant No. 708083), Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 200807010010) and the Fundamental Research Funds for the Central Universities.

Cite this article: 

Liu Hong-Xia(刘红侠), Li Jin(李劲),Li Bin(李斌), Cao Lei(曹磊),and Yuan Bo(袁博) Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs 2011 Chin. Phys. B 20 017301

[1] Taur Y 2001 wxIEEE Trans. Electron Devices48 2861
[2] Chiage T K and Chen M L 2007 wxSolid State Electronics51 387
[3] Song J J, Zhang H M, Hu H Y, Dai X Y and Xuan R X 2007 wxChin. Phys.16 3827
[4] Djeffal F, Meguellati M and Benhaya A 2009 wxPhysica E41 1872
[5] Balestra F, Cristoloveann S, Benachir M, Brini J and Elevra T 1987 wxIEEE Electron Device Letter8 410
[6] Lin G J, Lai H K, Li C, Chen S Y and Yu J Z 2008 wxChin. Phys. B17 3479
[7] Thompson S E, Armstrong M and Auth C 2004wx IEEE Electron Device Letters25 191
[8] Yin H Z, Hobart K D and Peterson R L 2005 wxIEEE Trans. Electron Devices52 2207
[9] Mizuno T, Sugiyama N and Kurobe A 2001 wxIEEE Trans. Electron Devices48 1612
[10] Zhou X 2000 wxIEEE Trans. Electron Devices47 113
[11] Luan S Z and Liu H X 2008 wxChin. Phys. B17 3077
[12] Venkataraman V, Nawal S and Kumar M J 2007 wxIEEE Trans. Electron Devices54 554
[13] Kumar M J, Venkataraman V and Nawal S 2006 wxIEEE Trans. Electron Devices53 2500
[14] Yong K K 1989 wxIEEE Trans. Electron Devices36 399
[15] Sharma R K, Gupta M and Gupta R S 2009 wxSuperlattices and Microstructures45 91
[16] Rim K, Anderson R and Boyd D 2003 wxSolid State Electronics47 1133
[17] Yang L F and Watling J R 2004 wxSemiconductor Science and Technology19 1174
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