CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs |
Li Jin(李劲)†,Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博) |
Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
|
|
Abstract Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si1-XGeX layer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.
|
Received: 29 March 2010
Revised: 28 April 2010
Accepted manuscript online:
|
PACS:
|
73.30.+y
|
(Surface double layers, Schottky barriers, and work functions)
|
|
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
|
73.61.-r
|
(Electrical properties of specific thin films)
|
|
85.30.Tv
|
(Field effect devices)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010). |
Cite this article:
Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博) The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs 2010 Chin. Phys. B 19 107301
|
[1] |
Khairurrijal, Mizubayashi W, Miyazaki S and Hirose M 2000 Appl. Phys. Lett. bf77 3580
|
[2] |
Hou Y T, Li M F and Lai W H 2001 Appl. Phys. Lett. bf78 4034
|
[3] |
Djeffal F, Meguellati M and Benhaya A 2009 Physica E bf41 1872
|
[4] |
Hoyt J L, Nayfeh H M and Eguchi S 2002 IEDM Tech. Dig. pp. 23--26
|
[5] |
Thompson S E, Armstrong M and Auth C 2004 IEEE Electron Device Lett. bf25 191
|
[6] |
Yin H Z, Hobart K D and Peterson R L 2005 IEEE Trans. Electron Devices bf52 2207
|
[7] |
Mizuno T, Sugiyama N and Kurobe A 2001 IEEE Trans. Electron Devices bf48 1612
|
[8] |
Zhou X 2000 IEEE Trans. Electron Devices bf47 113
|
[9] |
Venkataraman V, Nawal S and Kumar M J 2007 IEEE Trans. Electron Devices bf54 554
|
[10] |
Kumar M J, Venkataraman V and Nawal S 2006 IEEE Trans. Electron Devices bf53 1780
|
[11] |
Numata T, Mizuno T, Tezuka J, Koga and Takagi S 2005 IEEE Trans. Electron Devices bf52 554
|
[12] |
Yong K K 1989 IEEE Trans. Electron Devices bf36 399
|
[13] |
Sharma R K, Gupta M and Gupta R S 2009 Superlattices and Microstructures bf45 91
|
[14] |
Luan S Z, Liu H X, Jia R X and Cai N Q 2008 Acta Phys. Sin. bf57 3807 (in Chinese)
|
[15] |
Yang L F and Watling J R 2004 Semiconductor Science and Technology bf19 1174
|
[16] |
Zhang X J, Wang J P, Hao Y and Gong X 2006 Chin. Phys. bf15 631
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|