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Chin. Phys., 2007, Vol. 16(7): 2131-2135    DOI: 10.1088/1009-1963/16/7/056
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Oxygen-vacancy-related dielectric relaxation and conduction mechanisms in Bi5 TiNbWO15 ceramics

Wang Xiao-Juana, Gong Zhi-Qianga, Qian Ya-Fenga, Zhu Juna, Chen Xiao-Bingb
a College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China; b College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China;The National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210008, China
Abstract  This paper reports that the intergrowth ceramics Bi5TiNbWO15 (BW-BTN) have been prepared with the conventional solid-state reaction method. The dielectric and conductivity properties of samples were studied by using the dielectric relaxation and AC impedance spectroscopy in detail. Two distinct relaxation mechanisms were detected both in the plots of dielectric loss (tan\delta) and the imaginary part ({Z}'') versus frequency in the frequency range of 10 Hz--13MHz. We attribute the higher frequency relaxation process to the hopping process of the oxygen vacancies inside the grains, while the other seems to be associated with the space charges bound at the grain boundary layers. The AC impedance spectroscopy indicates that the conductivities at 625K for bulk and grain boundary are about 1.12\times10-3S/m and 1.43\times10-3S/m respectively. The accumulation of the space charges in the grain boundary layers induces a space charge potential of 0.52eV.
Keywords:  oxygen vacancies      intergrowth      dielectric relaxation      impedance spectroscopy  
Received:  16 November 2006      Revised:  14 December 2006      Published:  04 July 2007
PACS:  77.22.Gm (Dielectric loss and relaxation)  
  61.72.J- (Point defects and defect clusters)  
  61.72.Mm (Grain and twin boundaries)  
  72.80.-r (Conductivity of specific materials)  
  77.22.Jp (Dielectric breakdown and space-charge effects)  
  77.84.Dy  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10274066) and the Natural Science Foundation of Jiangsu Province, China (Grant No BK2005052).

Cite this article: 

Wang Xiao-Juan, Gong Zhi-Qiang, Qian Ya-Feng, Zhu Jun, Chen Xiao-Bing Oxygen-vacancy-related dielectric relaxation and conduction mechanisms in Bi5 TiNbWO15 ceramics 2007 Chin. Phys. 16 2131

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