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Chinese Physics, 2001, Vol. 10(11): 1062-1065    DOI: 10.1088/1009-1963/10/11/314
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

THEORETICAL DEPENDENCE OF LONG WAVELENGTH PHOTOEMISSION UPON THE SIZE OF Ag NANOPARTICLES EMBEDDED IN BaO SEMICONDUCTOR THIN FILM

Yang Hai (杨海)a, Cai Wu-de (蔡武德)a, Xu Bei-xue (许北雪)b, Wu Jin-lei (吴锦雷)b 
a Department of Physics, Yunnan Normal University, Kunming 650092, China; b Department of Electronics, Peking University, Beijing 100871, China
Abstract  The dependence of long wavelength photoemission upon the size of Ag nanoparticles embedded in a BaO semiconductor is predicted and discussed theoretically. The calculated results show that the increase in the diameter of the Ag nanoparticle, in the range from 1.5 to 37.0nm, leads to the emergence of a roughly Gaussian form of the photoemission spectra and the peaks become markedly narrower. The results also show that the increase in the diameter of the Ag nanoparticle leads to the decrease of the long wavelength threshold. The incident light wavelength corresponding to the peak value of the photoemission gets bigger with the increase of the size of Ag nanoparticles, thus showing a redshift.
Keywords:  photoemission      thin film      semiconductors  
Received:  17 May 2001      Revised:  15 July 2001      Accepted manuscript online: 
PACS:  79.60.Jv (Interfaces; heterostructures; nanostructures)  
  61.46.+w  
  78.66.Hf (II-VI semiconductors)  
  78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)  
  68.55.-a (Thin film structure and morphology)  

Cite this article: 

Yang Hai (杨海), Cai Wu-de (蔡武德), Xu Bei-xue (许北雪), Wu Jin-lei (吴锦雷) THEORETICAL DEPENDENCE OF LONG WAVELENGTH PHOTOEMISSION UPON THE SIZE OF Ag NANOPARTICLES EMBEDDED IN BaO SEMICONDUCTOR THIN FILM 2001 Chinese Physics 10 1062

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