Magnetism induced by Mn atom doping in SnO monolayer

doi:10.1088/1674-1056/27/11/117505

Abstract

The structural, magnetic properties, and mechanism of magnetization of SnO monolayer doped with 3d transition metal Mn atom were studied using first-principles calculations. The calculated results show that the substitution doping is easier to realize under the condition of oxygen enrichment. Numerical results reveal that the spin-splitting defect state of the Mn doped system is produced in the band gap and the magnetic moment of 5.0 μ_B is formed. The induced magnetic moment by Mn_sub is mostly derived from the 3d orbital of the doped Mn atom. The magnetic coupling between magnetic moments caused by two Mn atoms in SnO monolayer is a long-range ferromagnetic, which is due to the hole-mediated p-p and p-d interactions. The calculated results suggest that room-temperature ferromagnetism in a SnO monolayer can be induced after substitutional doping of a Mn atom.

Keywords: SnO monolayer ferromagnetism first-principles doping

Received: 21 July 2018
Revised: 05 September 2018
Accepted manuscript online:

PACS:	75.50.Gg	(Ferrimagnetics)
	75.50.Pp	(Magnetic semiconductors)
	75.75.Lf	(Electronic structure of magnetic nanoparticles)

Corresponding Authors: Ruilin Ha
E-mail: hanruilin0116@sxu.edu.cn

Cite this article:

Ruilin Han(韩瑞林), Yu Yan(闫羽) Magnetism induced by Mn atom doping in SnO monolayer 2018 Chin. Phys. B 27 117505

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Magnetism induced by Mn atom doping in SnO monolayer

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