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Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements |
| Yuanchao Huang(黄渊超)1,2, Rong Wang(王蓉)2,†, Yixiao Qian(钱怡潇)2, Yiqiang Zhang(张懿强)3, Deren Yang(杨德仁)1,2, and Xiaodong Pi(皮孝东)1,2,‡ |
1 State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
2 Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China;
3 School of Materials Science and Engineering&Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450001, China |
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Abstract The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full advantage of 4H-SiC for semiconductor devices. In this study, we show that co-doping group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant, i.e., aluminum (Al), through the defect-level repulsion between the energy levels of group-IVB elements and that of Al in 4H-SiC. Among group-IVB elements Ti has the most prominent effectiveness. Ti decreases the ionization energy of Al by nearly 50%, leading to a value as low as ~0.13 eV. As a result, the ionization rate of Al with Ti co-doping is up to ~5 times larger than that without co-doping at room temperature when the doping concentration is up to 1018 cm-3. This work may encourage the experimental co-doping of group-IVB elements such as Ti and Al to significantly improve the p-type doping efficiency of 4H-SiC.
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Received: 09 July 2021
Revised: 13 August 2021
Accepted manuscript online: 25 August 2021
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PACS:
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61.82.Fk
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(Semiconductors)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101), the National Natural Science Foundation of China (Grant Nos. 91964107 and 61774133), Fundamental Research Funds for the Central Universities, China (Grant No. 2018XZZX003-02), the National Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005), and Zhejiang University Education Foundation Global Partnership Fund. The National Supercomputer Center in Tianjin is acknowledged for computational support. |
Corresponding Authors:
Rong Wang, Xiaodong Pi
E-mail: rong_wang@zju.edu.cn;xdpi@zju.edu.cn
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Cite this article:
Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yixiao Qian(钱怡潇), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东) Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements 2022 Chin. Phys. B 31 046104
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[1] Kimoto T and Cooper J A 2014 Fundamentals of silicon carbide technology:growth, characterization, devices and applications (John Wiley & Sons) pp. 1-6
[2] Wang F F and Zhang Z 2016 CPSS Trans. Power Electron. Appl. 1 13
[3] Roccaforte F, Fiorenza P, Greco G, Nigro R L, Giannazzo F, Iucolano F and Saggio M 2018 Microelectron. Eng. 187-188 66
[4] Evwaraye A O, Smith S R and Mitchel W C 1999 J. Appl. Phys. 79 7726
[5] Kimoto T, Itoh A, Matsunami H, Sridhara S, Clemen L L, Devaty R P and Pensl G 1995 Appl. Phys. Lett. 67 2833
[6] Wang R, Bhat I B and Chow T P 2002 J. Appl. Phys. 92 7587
[7] Darmody C and Goldsman N 2019 J. Appl. Phys. 126 145701
[8] Raynaud C and Autran J L 1996 J. Appl. Phys. 86 2232
[9] Koizumi A, Suda J and Kimoto T. 2009 J. Appl. Phys. 106 013716
[10] Parisini A and Nipoti R 2013 J. Appl. Phys. 114 243703
[11] Heera V, Panknin D and Skorupa W 2001 Appl. Surf. Sci. 184 307
[12] An J, Namai M, Yano H and Iwamuro N 2017 IEEE Trans. Electron. Devices. 64 4219
[13] Han L, Liang L, Kang Y and Qiu Y 2020 IEEE Trans. Power. Electron. 36 2080
[14] Usman M and Nawaz M 2014 Solid State Electron. 92 5
[15] Wang X and Cooper J A 2010 IEEE Trans. Electron. Devices 57 511
[16] Huang B, Yoon M, Sumpter B G, Wei S H and Liu F 2015 Phys. Rev. Lett. 115 126806
[17] Janotti A, Wei S H and Zhang S B 2002 Phys. Rev. B 65 115203
[18] Persson C, Platzer-Björkman C, Malmström J, Törndahl T and Edoff M 2006 Phys. Rev. Lett. 97 146403
[19] Yang J and Wei S H 2019 Chin. Phys. B 28 086106
[20] Zhu J, Liu F, Stringfellow G B and Wei S H 2010 Phys. Rev. Lett. 105 195503
[21] Xia J 2021 J. Semicond. 42 060402
[22] Segev D and Wei S H 2003 Phys. Rev. Lett. 91 126406
[23] Moussa J E, Marom N, Sai N and Chelikowsky J R 2012 Phys. Rev. Lett. 108 226404
[24] Tang L, Yue R and Wang Y 2018 Carbon 130 458
[25] Janotti A, Wei S H and Zhang S B 2003 Appl. Phys. Lett. 83 3522
[26] Zuo C Y, Wen J and Bai Y L 2010 Chin. Phys. B 19 047101
[27] Ye Z, He H and Jiang L 2018 Nano Energy 52 527
[28] Wang L G and Zunger A 2003 Phys. Rev. Lett. 90 256401
[29] Lu J G, Zhang Y Z, Ye Z Z, Zhu L P, Wang L, Zhao B H and Liang Q L 2006 Appl. Phys. Lett. 88 222114
[30] Yinzhu Z, Zhizhen Y, Jianguo L, Haiping H and Xiuquan G 2016 J. Semicond. 28 322
[31] Miyata M and Hayafuji Y 2008 Appl. Phys. Express. 1 111401
[32] Burns R G and Burns R G 1993 Mineralogical applications of crystal field theory (United Kingdom:Cambridge University Press) pp. 7-44
[33] Wei S H and Zhang S B. 2002 Phys. Rev. B 66 155211
[34] Nakata A and Tsuneda T 2013 J. Chem. Phys. 139 064102
[35] Kresse G and Hafner J 1993 Phys. Rev. B 47 558
[36] Ni Z, Pi X, Cottenier S and Yang D 2017 Phys. Rev. B 95 075307
[37] Wei S H 2004 Comput. Mater. Sci. 30 337
[38] Dalibor T, Pensl G, Nordell N and Schöner A 1997 Phys. Rev. B. 55 13618
[39] Achtziger N and Witthuhn W 1997 Appl. Phys. Lett. 71 110 |
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