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Chin. Phys. B, 2021, Vol. 30(12): 127701    DOI: 10.1088/1674-1056/ac01c4
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors

Yuan-Yuan Zhang(张元元)1,2, Xiao-Qing Sun(孙晓清)1,2, Jun-Shuai Chai(柴俊帅)1,2,†, Hao Xu(徐昊)1,2, Xue-Li Ma(马雪丽)1,2, Jin-Juan Xiang(项金娟)1,2, Kai Han(韩锴)3, Xiao-Lei Wang(王晓磊)1,2,‡, and Wen-Wu Wang(王文武)1,2
1 Key Laboratory of Microelectronics & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 College of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
Abstract  We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2 (HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experimental measurement of electrical properties in the resistor-ferroelectric capacitor (R-FEC) circuit. Our results show that the thermodynamic coefficients α, β and γ also play a key role for the transient NC effect besides the viscosity coefficient and series resistor. Moreover, the smaller coefficients α and β, the more significant the transient NC effect. In addition, we also find that the thermodynamic process of transient NC does not obey the generally accepted viewpoint of Gibbs free energy minimization.
Keywords:  transient negative capacitance (NC)      ferroelectric      hafnium-zirconium oxide  
Received:  09 May 2021      Revised:  13 May 2021      Accepted manuscript online:  16 May 2021
PACS:  77.80.-e (Ferroelectricity and antiferroelectricity)  
  85.50.-n (Dielectric, ferroelectric, and piezoelectric devices)  
  77.84.-s (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Key Project of Science and Technology of China (Grant No. 2017ZX02315001-002).
Corresponding Authors:  Jun-Shuai Chai, Xiao-Lei Wang     E-mail:  chaijunshuai@ime.ac.cn;wangxiaolei@ime.ac.cn

Cite this article: 

Yuan-Yuan Zhang(张元元), Xiao-Qing Sun(孙晓清), Jun-Shuai Chai(柴俊帅), Hao Xu(徐昊), Xue-Li Ma(马雪丽), Jin-Juan Xiang(项金娟), Kai Han(韩锴), Xiao-Lei Wang(王晓磊), and Wen-Wu Wang(王文武) Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped HfO2 ferroelectric capacitors 2021 Chin. Phys. B 30 127701

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