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Chin. Phys. B, 2020, Vol. 29(9): 098502    DOI: 10.1088/1674-1056/ab9de6

Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications

Wenqiang Song(宋文强)1, Fei Hou(侯飞)1, Feibo Du(杜飞波)1, Zhiwei Liu(刘志伟)1, Juin J. Liou(刘俊杰)2
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 The College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Abstract  A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.
Keywords:  electrostatic discharge (ESD)      enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR)      modified lateral silicon-controlled rectifier (MLSCR)      failure current      holding voltage  
Received:  29 March 2020      Revised:  21 May 2020      Published:  05 September 2020
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61874098 and 61974017) and the Fundamental Research Project for Central Universities, China (Grant No. ZYGX2018J025).
Corresponding Authors:  Zhiwei Liu     E-mail:

Cite this article: 

Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰) Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications 2020 Chin. Phys. B 29 098502

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